Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICs

Accelerated OFF-State stressing of multichannel AlGaN/GaN Superlattice Castellated Field Effect Transistors (SLCFET) with varying dielectric thickness (di) and fin-width (Wfin) was studied using noise measurements. As di increased, the failure mechanism changed from an abrupt breakdown to gradual time dependent dielectric breakdown (TDDB). Smaller Wfin is found to extend lifetime compared to wider Wfin under such stressing condition. Percolation theory and associated trap generation during stressing can explain the observed behavior.

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Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICs

Cited by 2 publications

References 10 publications

SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process

SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs

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