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Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors

“…The decomposition of impurity species will make contribution to the thin film's densification and the reduction of the defects, which are beneficial to the improvement of the leakage current and the capacitance. (222) plane has the lowest possible surface energy [11]. This result indicates that high annealing temperature enhances crystallization.…”

“…SiO 2 is used as the workhorse dielectric material in devices, but exhibits a dielectric constant of only 3.5 [11]. Nowadays, the dominant SiO 2 becomes unacceptable and can be replaced by high-k materials (HfO 2 , ZrO 2 , Y 2 O 3 , small subthreshold swing, and high field-effect mobility levels because high-k materials can increase the physical thickness of gate insulators to prevent tunneling and provide high capacitance densities [12].…”

“…Nowadays, the dominant SiO 2 becomes unacceptable and can be replaced by high-k materials (HfO 2 , ZrO 2 , Y 2 O 3 , small subthreshold swing, and high field-effect mobility levels because high-k materials can increase the physical thickness of gate insulators to prevent tunneling and provide high capacitance densities [12]. Up to now, yttrium oxide (Y 2 O 3 ) dielectric thin films grown on silicon substrates have attracted much attention in recent years [10][11][12][13][14][15][16][17][18][19]. Y 2 O 3 has been regarded as one of the most promising candidates for the dielectric for AOS TFTs devices as a consequence of its particular physical properties, such as thermally and chemically stable, low leakage current, high refractive index (~2), wide band gap (5.5eV), relatively high dielectric constant (14~18), and relatively high band offsets (2.3eV) with respect to silicon [12,13].…”

Tunable Liquid Crystal Alignment and Driving Mode on Lanthanum Aluminum Zirconium Zinc‐Oxide Thin Film Achieved by Convenient Brush‐Coating Method

“…[39] These outstanding EO performances were attributed to the good dielectric characteristics of the LaAlZrZnO. [40][41][42][43] The anchoring energy property was investigated in Figure 9(c), and the anchoring energy values of the brush-coated LaAlZrZnO films cured at 180 and 280 °C were obtained to 2.26 × 10-4 J/m2 and 2.97 × 10-4 J/m2, respectively. Considering that the corresponding value of conventionally used PI layer is in the range of 10-4À 10-5 J/m2, the result indicates the competitivity of the brush-coated LaAlZrZnO film.…”

Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

“…Yttrium oxide, Y 2 O 3 , is yet another promising high-k material due to a combination of favourable individual electrical properties like a wide bandgap (5.8 eV), a high refractive index (1.9-2.0), a high dielectric constant (14)(15)(16)(17)(18), a low dissipation factor (<0.005) and nally a high breakdown voltage (>3 MV cm À1 ). 23 Furthermore, Y 2 O 3 has the ability to interact intimately with the oxide semiconductor by forming a chemical surface bond leading to an improved interaction and formation of an intimate dielectricsemiconductor interface. As a result, low electron trap densities and thus low leakage currents can be realized.…”