Yttrium oxide based metal-insulator-semiconductor structures on silicon

Kalkur, T. S.; Kwor, R.; Araújo, Carlos A. Paz de

doi:10.1016/0040-6090(89)90723-2

Cited by 30 publications

(10 citation statements)

References 4 publications

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“…This compares favorably with values reported previously for yttrium oxide films. 2,3,6,8,11,13 The behavior of the refractive index can be explained by the behavior of the average roughness of the films measured with AFM. The films deposited at low temperatures without etching time or too long on etching time ͑20 min͒ were considerably rougher than those deposited on previously etched substrates for 5 or 15 min.…”

Section: Discussionmentioning

confidence: 99%

Optical, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates

Araiza

Aguilar-Frutis²,

Falcony³

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Discussionmentioning

confidence: 99%

Optical, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates

Araiza

Aguilar-Frutis²,

Falcony³

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Laser beam rastering offers advantages over these other "fixed beam" techniques, and has been extended to deposit uniform films of yttria onto 200 mm (8-inch) diameter substrates. Yttria (Y 2 0 3 ) has a variety of uses in thin film form including insulators for transistor gates in electrolumenescent displays, as MIS diodes, and as capacitors [ 10,11,12,13]. Furthermore, due to the fact that PLD is inherently a low temperature process, yttria can be deposited onto temperature sensitive substrates such as CdTe or HgCdTe [8].…”

Section: Methodsmentioning

confidence: 99%

On- and Off-AXIS Large-Area Pulsed Laser Deposition

Greer

Tabat

1995

MRS Proc.

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Over the past few years Pulsed Laser Deposition (PLD) has become a popular technique for the deposition of a wide variety of thin films, and PLD systems are currently found in numerous industrial, government, university, and military laboratories. At present, it is estimated that well over 200 different materials have been deposited by PLD and the list keeps growing. However, even with all the interest in laser deposition the technique has not yet emerged as an industrial process. At the moment, industry still prefers standard thin film growth techniques such as magnetron and ion beam sputtering, chemical vapor deposition, and electron beam evaporation for production applications. These processes have been in use for decades and have demonstrated the ability to deposit films of most materials over large areas with excellent uniformity at reasonable cost and deposition rates. Furthermore, an entire infrastructure has been built up to support these processes including standardization of deposition rate monitors, power sources, target and crucible sizes, etc. On the other hand, laser-deposition is still an emerging technology, and relatively little infrastructure exists to adequately support either research or industrial applications. Since there are several materials which are difficult if not impossible to grow in thin-film form by more conventional techniques, it is expected that as pulsed laser-deposition matures this unique process will take its rightful place on the manufacturing line.

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“…[1][2][3][4] Single crystalline thin films are of great importance for devices because of their reduced defect content which can result in improved properties. [1][2][3][4] Single crystalline thin films are of great importance for devices because of their reduced defect content which can result in improved properties.…”

Section: ͓S0003-6951͑99͒05441-8͔mentioning

confidence: 99%

Epitaxial growth of Y2O3:Eu thin films on LaAlO3

Gao

Kumar

Cho

et al. 1999

Applied Physics Letters

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We report the epitaxial growth of europium-activated yttrium oxide (Y2O3:Eu) (001) thin films on LaAlO3 (001) using laser ablation deposition at a substrate temperature of 775 °C and 10 Hz pulse repetition rate. The orientation relationship between the films and the substrates is [110]Y2O3∥[100]LaAlO3 and [−110]Y2O3∥[010]LaAlO3 which results in a lattice mismatch of only 0.8%. Transmission electron microscopy (TEM) of the films reveals the single crystalline Y2O3:Eu thin film to contain small pores. Scanning transmission electron microscopy (STEM) imaging of the films shows the substrate always terminates with the Al sublattice. Moreover, the STEM reveals that no precipitates of Eu had formed in the films.

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Yttrium oxide based metal-insulator-semiconductor structures on silicon

Cited by 30 publications

References 4 publications

Optical, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates

Optical, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates

On- and Off-AXIS Large-Area Pulsed Laser Deposition

Epitaxial growth of Y2O3:Eu thin films on LaAlO3

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