Two-dimensional (2D) rare-earth oxyhalides (REOXs) with
novel properties
offer fascinating opportunities for fundamental research and applications.
The preparation of 2D REOX nanoflakes and heterostructures is crucial
for revealing their intrinsic properties and realizing high-performance
devices. However, it is still a great challenge to fabricate 2D REOX
using a general approach. Herein, we design a facile strategy to prepare
2D LnOCl (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy) nanoflakes using the
molten salt method assisted by the substrate. A dual-driving mechanism
was proposed in which the lateral growth could be guaranteed by the
quasi-layered structure of LnOCl and the interaction between the nanoflakes
and the substrate. Furthermore, this strategy has also been successfully
applied for block-by-block epitaxial growth of diverse lateral heterostructures
and superlattice. More significantly, the high performance of MoS2 field-effect transistors with LaOCl nanoflake as the gate
dielectric was demonstrated, exhibiting competitive device characteristics
of high on/off ratios up to 107 and low subthreshold swings
down to 77.1 mV dec–1. This work offers a deep understanding
of the growth of 2D REOX and heterostructures, shedding new light
on the potential applications in future electronic devices.