Z‐shaped gate TFET with horizontal pocket for improvement of electrostatic behavior

Abstract

In this paper, a new Z-shaped gate TFET structure is proposed with an n+ horizontal pocket insertion beneath the source. The Z-TFET structure provides higher ON current by 2-decades as compared to conventional TFET due to the vertical tunneling and presence of HfO 2 gate oxide. Similarly, the ambipolar current reduces by 2-decades without affecting subthreshold swing (SS) and OFF current significantly. The ON current is further improved by positioning

Performance analysis of Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal N+ pocket

“…From Figure 7(B), it is clearly evident that the increment in the dielectric constant of the biomolecules increases the drain ON current of the device and at the same time the back gate in the ZHP‐DM‐TFET biosensor control the leakage current by widening the barrier when the device in the OFF state. The scaling of the back gate effectively reduces the ambipolar current for the Z‐shaped TFET device and is effectively explained by Sahoo et al 37 Here, we measure the sensitivity of the device in terms of threshold voltage and the ratio of ON current to OFF current. The mathematical expression for measuring the sensitivity is given as follows. The threshold voltage of the device impacts the amount of input voltage required to turn on the device.…”

“…Figure 1(A) represents the architecture of the Z‐shaped gate with an extended horizontal pocket in the source region TFET device proposed by Sahoo et al 37 Figure 1(B) represents the proposed DM hetero dielectric Z‐shaped gate horizontal pocket TFET (DM‐ZG‐HPTFET) biosensor discussed in this work.…”

“…(A) Z‐shaped gate horizontal pocket TFET 37 . (B) The proposed dielectric modulated hetero dielectric Z‐shaped TFET‐based biosensor.…”

“…Here in this work, we have proposed and analyzed the Z‐shaped gate hetero dielectric horizontal source pocket TFET[ZHP‐DM‐TFET]‐based biosensor for the first time by considering the advantages of structural modification and the simulation study carried by Sahoo et al 37 The Z‐shaped gate structure with a horizontal pocket in the source region has shown superiority over the regular gate structures in terms of ON current and reduction of ambipolar conductivity of TFET simultaneously 37 . We have to get hold of the advantage of Z shape gate TFET along with the horizontal pocket and try to incorporate with DM TFET to develop the biosensor.…”

DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

“…[25] In order to achieve a higher on-state current of the silicon-based TFETs, the source-pocket TFET (PNPN-TFET) [26][27][28][29][30] has recently been proposed, which features a heavily doped N pocket added on the source side, leading to enhanced on-state currents, [26] improved on/off current ratios and steep subthreshold swings compared with the conventional PIN-TFETs. Different structures and materials of pocket in PNPN-TFETs have been explored: (1) vertical pocket inserted between the source and channel based on the fully depleted pocket region, which results in reducing the tunneling width and then enhancing the lateral electric field at the tunneling junction; [26,27,30] (2) horizontal pocket added on the source side based on the line tunneling-based structures; [29,31] (3) the use of SiGe pocket materials [32,35] due to its VLSI compatibility and tunable bandgap. In addition, a gate-to-pocket overlapping structure has been demonstrated as a new way to enhance the BTBT generation rate and thus to improve the tunneling current.…”