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Томилов, А. П.; Smetanin, A. V.; Chernykh, I. N.; Smirnov, M. K.

doi:10.1023/a:1012396309686

Cited by 16 publications

(7 citation statements)

References 27 publications

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“…Figure b describes the observed voltammetry for a Ga(l) electrode immersed in a solution containing dissolved As 2 O 3 . At pH = 13, the predominant species in solution was HAsO 3 2– . At low formal concentrations of As 2 O 3 , the voltammetric response for sweeps to more negative potentials lacked a well-defined peak.…”

Section: Resultssupporting

confidence: 88%

“…At pH = 13, the predominant species in solution was HAsO 3 2− . 27 At low formal concentrations of As 2 O 3 , the voltammetric response for sweeps to more negative potentials lacked a well-defined peak. At high (≥50 mM) formal concentrations of As 2 O 3 , the voltammetric response looked similar but also included a small cathodic wave with a peak at −1.4 V (Supporting Information, Figure S3).…”

Section: ■ Experimental Sectionmentioning

confidence: 95%

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Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes

Fahrenkrug

Maldonado

2012

J. Am. Chem. Soc.

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Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ≥ 80 °C). Ga(l) pool electrodes yielded consistent electrochemical behavior, affording repetitive measurements that illustrated the interdependences of applied potential, concentration of dissolved As(2)O(3), and electrodeposition temperature on the quality of the resultant c-GaAs(s). Raman spectra indicated the composition of the resultant film was strongly dependent on both the electrodeposition temperature and dissolved concentration of As(2)O(3) but not to the applied bias. For electrodepositions performed either at room temperature or with high (≥0.01 M) concentrations of dissolved As(2)O(3), Raman spectra of the electrodeposited films were consistent with amorphous As(s). X-ray diffractograms of As(s) films collected after thermal annealing indicated metallurgical alloying occurred only at temperatures in excess of 200 °C. Optical images and Raman spectra separately showed the composition of the as-electrodeposited film in dilute (≤0.001 M) solutions of dissolved As(2)O(3)(aq) was pure c-GaAs(s) at much lower temperatures than 200 °C. Diffractograms and transmission electron microscopy performed on as-prepared films confirmed the identity of c-GaAs(s). The collective results thus provide the first clear demonstration of an electrochemical liquid-liquid-solid (ec-LLS) process involving a liquid metal that serves simultaneously as an electrode, a solvent/medium for crystal growth, and a coreactant for the synthesis of a polycrystalline semiconductor. The presented data serve as impetus for the further development of the ec-LLS process as a controllable, simple, and direct route for technologically important optoelectronic materials such as c-GaAs(s).

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Section: Resultssupporting

confidence: 88%

Section: ■ Experimental Sectionmentioning

confidence: 95%

Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes

Fahrenkrug

Maldonado

2012

J. Am. Chem. Soc.

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“…GaAs has been deposited by reduction of Ga 3+ ions and As 3+ species (e.g., H 3 AsO 3 , HAsO 3 2– ) using various types of plating solutions. Earlier studies used molten salts of B 2 O 3 /NaF/Ga 2 O 3 /NaAsO 2 as the plating solution to deposit thin films of crystalline GaAs at 720–760 °C .…”

Section: Electrochemical Synthesis Of Photocathodesmentioning

confidence: 96%

Electrochemical Synthesis of Photoelectrodes and Catalysts for Use in Solar Water Splitting

et al. 2015

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This review focuses on introducing and explaining electrodepostion mechanisms and electrodeposition-based synthesis strategies used for the production of catalysts and semiconductor electrodes for use in water-splitting photoelectrochemical cells (PECs). It is composed of three main sections: electrochemical synthesis of hydrogen evolution catalysts, oxygen evolution catalysts, and semiconductor electrodes. The semiconductor section is divided into two parts: photoanodes and photocathodes. Photoanodes include n-type semiconductor electrodes that can perform water oxidation to O2 using photogenerated holes, while photocathodes include p-type semiconductor electrodes that can reduce water to H2 using photoexcited electrons. For each material type, deposition mechanisms were reviewed first followed by a brief discussion on its properties relevant to electrochemical and photoelectrochemical water splitting. Electrodeposition or electrochemical synthesis is an ideal method to produce individual components and integrated systems for PECs due to its various intrinsic advantages. This review will serve as a good resource or guideline for researchers who are currently utilizing electrochemical synthesis as well as for those who are interested in beginning to employ electrochemical synthesis for the construction of more efficient PECs.

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“…At pH 2, As(III) and As(V) exist as the neutral species HAsO 2 and H 3 AsO 4 , which migrate equally easily to both cathode and anode. Although electrochemical reduction of As(III) and As(V) is inefficient, , long-term electrolysis in the batch reactor permitted irreversible loss of As from the solution as either As 0 or AsH 3 (g), which latter was readily detectable . Arsine was not observed under analogous flow conditions because the detention time in the cell was short and because electrochemical oxidation of As(III) to As(V) is much more efficient than reduction …”

Section: Resultsmentioning

confidence: 99%

Electrochemical Method for Remediation of Arsenic-Contaminated Nickel Electrorefining Baths

Wang

Bejan

Bunce

2005

Ind. Eng. Chem. Res.

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At only ppm concentrations, arsenic is incompatible with the deposition of pure nickel at the cathode of a nickel electrorefining bath. We report an electrochemical method for the removal of arsenic. At a Ti/IrO 2 anode, chloride ion in the bath is oxidized to HOCl, which effects the chemical oxidation of As(III) to As(V). HOCl also reoxidizes any As(III) that might be formed by back-reduction at the pure nickel cathode, preventing cathodic reduction of As(III) to elemental arsenic or to the toxic gas arsine, AsH 3 . If, alternatively, a pure copper cathode is employed, the cathode potential can be controlled to electroseparate copper from nickel during the remediation of the bath, while achieving complete oxidation of As(III). After pH adjustment to ∼4, arsenic is removed with added Fe(III) as a chemisorbed arsenate-ferrihydrite precipitate, leaving the bath essentially free of both iron and arsenic.

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Cited by 16 publications

References 27 publications

Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes

Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes

Electrochemical Synthesis of Photoelectrodes and Catalysts for Use in Solar Water Splitting

Electrochemical Method for Remediation of Arsenic-Contaminated Nickel Electrorefining Baths

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