2002
DOI: 10.1023/a:1015383703991
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Cited by 10 publications
(12 citation statements)
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“…Moreover, a second region at lower frequencies is present. The assignment of this region to a transport process related with diffusion of the products and/or the charge carriers in the semiconductor was discarded because diffusion processes emerge in EIS as straight lines with a slope of 45° (usually they are represented as Warburg elements in equivalent circuits). In this case, the angle is comprised between 40 and 60°, and it changes with the applied potential.…”
Section: Resultsmentioning
confidence: 99%
“…Moreover, a second region at lower frequencies is present. The assignment of this region to a transport process related with diffusion of the products and/or the charge carriers in the semiconductor was discarded because diffusion processes emerge in EIS as straight lines with a slope of 45° (usually they are represented as Warburg elements in equivalent circuits). In this case, the angle is comprised between 40 and 60°, and it changes with the applied potential.…”
Section: Resultsmentioning
confidence: 99%
“…In the first case, for example, difficulties in finding an adequate theoretical explanation for the frequency dependences were observed. In the second case, the difficulties lie in finding an equivalent circuit whose impedance is the closest to the one measured experimentally [9][10][11][12][13].…”
Section: Resultsmentioning
confidence: 99%
“…A number of studies have been carried out on the photoanodic properties of α-Fe 2 O 3 in wet-type solar cells since α-Fe 2 O 3 has a relatively small band gap of 2.2 eV and photoelectrochemical stability in aqueous solutions. α-Fe 2 O 3 has, however, small optical absorption coefficient and carrier mobility, both of which are disadvantages for photoanodic properties. , Improvements of absorption coefficient and carrier mobility would lead to an increase in quantum efficiency and energy conversion efficiency. Increasing the carrier mobility, however, would be difficult because the minority carrier diffusion length is small at 2−4 nm in α-Fe 2 O 3 3 due to the hopping mechanism .…”
Section: Introductionmentioning
confidence: 99%
“…Increasing the carrier mobility, however, would be difficult because the minority carrier diffusion length is small at 2−4 nm in α-Fe 2 O 3 3 due to the hopping mechanism . An increase in carrier concentration has been attempted by doping α-Fe 2 O 3 with various metal cations, which often introduce energy traps, however, leading to reduced carrier mobility.…”
Section: Introductionmentioning
confidence: 99%