Zeeman Effect of Bound Exciton Complexes in ZnO

Loose, P.; Rosenzweig, M.; Wöhlecke, M.

doi:10.1002/pssb.2220750113

Cited by 24 publications

(23 citation statements)

References 12 publications

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“…Therefore, we attribute the I 9 line as a donor bound exciton complex in an excellent agreement with magneto-absorption data of Ref. 3.…”

Section: Thermalization Properties In Transmissionsupporting

confidence: 90%

“…This is in contradiction to the magneto-absorption data of Ref. 3. Moreover, from the thermalization of PL components in magnetic field B c the authors of Refs.…”

Section: Introductioncontrasting

confidence: 79%

“…It is necessary to note that the thermalization behavior corresponding to the (D 0 , X) complex was not observed for the I 4 in Ref. 3. This was probably caused by the same processes that prevented our observation of the I 4 transition in PT spectra at all.…”

Section: Thermalization Properties In Emissionmentioning

confidence: 80%

“…Such splitting governed by the zero field spin-exchange splitting of the corresponding exciton state was indeed observed in ZnO for I 2 and I 3 lines. 3,4 The transitions from excitons bound to neutral donors ((D 0 , X) complex) can be distinguished from the excitons bound to neutral acceptors ((A 0 , X) complex) by the thermalization of the absorption or emission components in magnetic field B ⊥ c. The corresponding thermalization in absorption is caused by the splitting of the ground state (D 0 state) which was observed for the lines from I 5 to I 9 in Ref. 3.…”

Section: Introductionmentioning

confidence: 93%

“…1,2,3,4 Although the origin of these transition lines remained in the focus of intensive research over more than 30 years, 1,2,3,4,5,6,7,8,9 a convergent picture concerning the nature of the impurities (donor or acceptor character) as well as the symmetry of the valence band hole (Γ 7 or Γ 9 character) involved in the complexes, has not yet emerged.…”

Section: Introductionmentioning

confidence: 99%

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Magneto-optical properties of bound excitons in ZnO

et al. 2004

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We present results of magneto-optical measurements and theoretical analysis of shallow bound exciton complexes in bulk ZnO. Polarization and angular dependencies of magneto-photoluminescence spectra at 5 T suggest that the upper valence band has Γ7 symmetry. Nitrogen doping leads to the formation of an acceptor center that compensates shallow donors. This is confirmed by the observation of excitons bound to ionized donors in nitrogen doped ZnO. The strongest transition in the ZnO:N (I9 transition) is associated with a donor bound exciton. This conclusion is based on its thermalization behavior in temperature-dependent magneto-transmission measurements and is supported by comparison of the thermalization properties of the I9 and I4 emission lines in temperature-dependent magneto-photoluminescence investigations.

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“…Therefore, we attribute the I 9 line as a donor bound exciton complex in an excellent agreement with magneto-absorption data of Ref. 3.…”

Section: Thermalization Properties In Transmissionsupporting

confidence: 90%

“…This is in contradiction to the magneto-absorption data of Ref. 3. Moreover, from the thermalization of PL components in magnetic field B c the authors of Refs.…”

Section: Introductioncontrasting

confidence: 79%

Section: Thermalization Properties In Emissionmentioning

confidence: 80%

Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

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Magneto-optical properties of bound excitons in ZnO

et al. 2004

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Spectral Identification of Impurities and Native Defects in ZnO

Meyer

Hofmann

Stehr

et al. 2011

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

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Bound exciton and donor–acceptor pair recombinations in ZnO

Meyer

Alves

Hofmann

et al. 2004

Physica Status Solidi (b)

1,608

153

1,169

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The optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements. At liquid helium temperature in undoped crystals the neutral donor bound excitons dominate in the PL spectrum. Two electron satellite transitions (TES) of the donor bound excitons allow to determine the donor binding energies ranging from 46 to 73 meV. These results are in line with the temperature dependent Hall effect measurements. In the as-grown crystals a shallow donor with an activation energy of 30 meV controls the conductivity. Annealing annihilates this shallow donor which has a bound exciton recombination at 3.3628 eV. Correlated by magnetic resonance experiments we attribute this particular donor to hydrogen. The Al, Ga and In donor bound exciton recombinations are identified based on doping and diffusion experiments and using secondary ion mass spectroscopy. We give a special focus on the recombination around 3.333 eV, i.e. about 50 meV below the free exciton transition. From temperature dependent measurements one obtains a small thermal activation energy for the quenching of the luminescence of 10 ± 2 meV despite the large localization energy of 50 meV. Spatially resolved CL measurements show that the 3.333 eV lines are particularly strong at crystal irregularities and occur only at certain spots hence are not homogeneously distributed within the crystal contrary to the bound exciton recombinations. We attribute them to excitons bound to structural defects (Y-line defect) very common in II-VI semiconductors. For the bound exciton lines which seem to be correlated with Li and Na doping we offer a different interpretation. Li and Na do not introduce any shallow acceptor level in ZnO which otherwise should show up in donor -acceptor pair recombinations. Nitrogen creates a shallow acceptor level in ZnO. Donor -acceptor pair recombination with the 165 meV deep N-acceptor is found in nitrogen doped and implanted ZnO samples, respectively. In the best undoped samples excited rotational states of the donor bound excitons can be seen in low temperature PL measurements. At higher temperatures we also see the appearance of the excitons bound to the B-valence band, which are approximately 4.7 meV higher in energy.

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Zeeman Effect of Bound Exciton Complexes in ZnO

Cited by 24 publications

References 12 publications

Magneto-optical properties of bound excitons in ZnO

Magneto-optical properties of bound excitons in ZnO

Spectral Identification of Impurities and Native Defects in ZnO

Bound exciton and donor–acceptor pair recombinations in ZnO

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