2000
DOI: 10.1126/science.287.5455.1019
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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

Abstract: Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counter… Show more

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Cited by 7,601 publications
(3,844 citation statements)
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References 29 publications
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“…It also demonstrates that by simple change in the shape and size of nanomaterial it is possible to tune the physical properties of nanostructure [12][13][14] . However, present and existing theories and results [5][6][7] cannot satisfactorily articulate the origin of the witnessed ferromagnetism. Recently, RT-FM was detected in undoped in addition to nonmagnetic element doped in semiconductors.…”
Section: Introduction This Paper Published In Acs Applied Materials Andmentioning
confidence: 81%
See 1 more Smart Citation
“…It also demonstrates that by simple change in the shape and size of nanomaterial it is possible to tune the physical properties of nanostructure [12][13][14] . However, present and existing theories and results [5][6][7] cannot satisfactorily articulate the origin of the witnessed ferromagnetism. Recently, RT-FM was detected in undoped in addition to nonmagnetic element doped in semiconductors.…”
Section: Introduction This Paper Published In Acs Applied Materials Andmentioning
confidence: 81%
“…In addition to this, it is also recognized as semiconductor with large excitonic binding energy (60meV) 4 , wide-band gap (3.37eV) and exhibits multifunctional properties. The idea of DMS with dilute doping of magnetic elements in a host semiconductor to create the RT magnetic semiconductor was first predicted by Dielt et al 5 on the p-type wide band gap semiconductor GaN and Mn doped ZnO. Similarly Sato et al 6,7 by theoretically calculation, based on local density approximation shows ferromagnetic ordering with T C above room temperature for n- elements such as Cu, Ni, Co, Fe, Mn, etc.…”
Section: Introduction This Paper Published In Acs Applied Materials Andmentioning
confidence: 98%
“…Text Diluted Magnetic Semiconductors (DMS), consisting on semiconductor matrices containing a small amount of magnetic impurities are among the most interesting new magnetic materials in view of their potential applications for spintronics [1,2]. The main challenge for this kind of materials is to present a Curie Temperature (TC) above 300 K in order to be useful for technological applications.…”
Section: /11mentioning
confidence: 99%
“…The now‐observed NIR emission clearly cannot be attributed to the typically isolated Mn 2+ ions; however, one possible explanation is given by the occurrence of Mn 2+ ion aggregation. Interionic coupling between transition metal ions often leads to fascinating physical phenomena, such as ferromagnetism in Zn 1– x Mn x Te15 and ZnO:Mn,16 multiferroism in BiFeO 3 thin films,17 superconduction in Y/La–Ba/Sr–Cu–O ceramics,18, 19 and giant magnetoresistance in thin films of La 2/3 Ba 1/3 MnO x 20 and La 0.67 Ca 0.33 MnO x 21. These physical properties are primarily ascribed to the delocalization and interaction of the 3d electrons of transition metal ions.…”
Section: Introductionmentioning
confidence: 99%