Zero bias resistance peak in compensated germanium tunnel junctions

Christopher, J. E.; Darley, H. M.

doi:10.1088/0022-3719/11/12/019

Cited by 2 publications

(2 citation statements)

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“…Wolf (1975) has shown that in addition to this temperature dependence, Schottky barrier tunnel junctions should exhibit a sharp peak in the incremental resistance at zero bias where the number of states available for phonon-assisted variable-range hopping drops sharply to zero. The zero-bias peak with its predicted temperature dependence has been observed in both radiation-compensated Ge junctions (Christopher and Darley 1978) and chemically-compensated Si junctions (Wolf et al 1975).…”

Section: J T Winziners and J E Christophermentioning

confidence: 91%

“…An important phenomenon which has been observed in tunnel junctions on heavily compensated material is the e~p ( l / T l /~) dependence of the incremental resistance at zero bias (Wolf et a1 1975, Christopher andDarley 1978). Where compensation has been induced to such an extent that the Fermi level no longer resides in the conduction band but rather in a region of localised states at the low-energy side of the impurity band, the conduction process known as phonon-assisted variable-range hopping occurs, where the conductance can be characterised as…”

Section: J T Winziners and J E Christophermentioning

confidence: 99%

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Schottky barrier tunnel junctions were prepared by cleaving degenerately doped silicon in a stream of evaporating indium. For heavily doped samples the bias dependence of the incremental resistance at helium temperatures showed agreement with many features of the theoretical predictions for a free electron model. For these samples striations, regular doping density variations reportedly present in all silicon crystals, played a minimal role. For lowly doped samples disagreement between theory and experiment was observed. The inapplicability to lowly doped silicon of the simple theory and the effect of striations are both interpreted to contribute to the deviations. Striations are essential for understanding the radiation compensations results; behaviour in a single junction appropriate to a parallel combination of junctions with different doping density was observed. For strongly compensated material the zero-bias conductance exhibited an exp( -C/T'I4) behaviour characteristic of tunnelling via localised states.

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Section: J T Winziners and J E Christophermentioning

confidence: 91%

Section: J T Winziners and J E Christophermentioning

confidence: 99%