Zero-Bias Tunneling Anomalies—Temperature, Voltage, and Magnetic Field Dependence

Shen, L. Y. L.; Rowell, J. M.

doi:10.1103/physrev.165.566

Cited by 156 publications

(71 citation statements)

References 25 publications

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“…The study of the Kondo effect out of equilibrium started both experimentally and theoretically in the late 1960's when the tunneling between two metals through insulating barriers was investigated [3][4][5][6][7][8] as a function of bias voltage. The observed logarithmic enhancement of the tunneling for low temperature and small voltages was attributed to exchange tunneling through magnetic impurities within the barriers by Appelbaum 9,10 and Anderson.…”

Section: Introductionmentioning

confidence: 99%

The Kondo Effect in Non-Equilibrium Quantum Dots: Perturbative Renormalization Group

et al. 2005

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While the properties of the Kondo model in equilibrium are very well understood, much less is known for Kondo systems out of equilibrium. We study the properties of a quantum dot in the Kondo regime, when a large bias voltage V and/or a large magnetic field B is applied. Using the perturbative renormalization group generalized to stationary nonequilibrium situations, we calculate renormalized couplings, keeping their important energy dependence. We show that in a magnetic field the spin occupation of the quantum dot is non-thermal, being controlled by V and B in a complex way to be calculated by solving a quantum Boltzmann equation. We find that the well-known suppression of the Kondo effect at finite V ≫ TK (Kondo temperature) is caused by inelastic dephasing processes induced by the current through the dot. We calculate the corresponding decoherence rate, which serves to cut off the RG flow usually well inside the perturbative regime (with possible exceptions). As a consequence, the differential conductance, the local magnetization, the spin relaxation rates and the local spectral function may be calculated for large V, B ≫ TK in a controlled way.

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Section: Introductionmentioning

confidence: 99%

The Kondo Effect in Non-Equilibrium Quantum Dots: Perturbative Renormalization Group

et al. 2005

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“…Однако представленные доказательства не являются достаточно убедительными. Появление пика при V = 0 в проводимости точечно-го контакта (ТК) нормальный металл / сверхпроводник (N/S) может быть обусловлено характеристиками кон-такта не связанными с ТПС [18][19][20][21][22]. Характерный для сверхпроводящего ТПС пик при нулевом напряжении в проводимости ТК нормальный металл / топологический сверхпроводник (так называемый ZBCP -zero bias conductance peak) возникает при определенном направ-лении тока относительно кристаллографических осей сверхпроводника, а его форма, амплитуда и ширина зависят от силы туннельного барьера Z.…”

Section: Introductionunclassified

Двухзонная сверхпроводимость кристаллов Sn-=SUB=-1-x-=/SUB=-In-=SUB=-x-=/SUB=-Te с T-=SUB=-c-=/SUB=-=3.6-3.8 K

Gorina¹,

Golubkov²,

Осина³

et al. 2017

Физика Твердого Тела

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Исследованы спектры андреевского отражения высококачественных сверхпроводящих кристаллов Sn1-xInxTe с критической температурой Tc=3.6-3.8 K. Доказана двухзонная природа сверхпроводящего состояния данного соединения. Измеренные энергетические щели имеют s-симметрию и равны: 2Delta1/kTc=3.5±0.9 и 2Delta2/kTc=7±1. Ни на одном из контактов с сопротивлением (1.5-23) Omega не наблюдался характерный для топологического сверхпроводящего состояния пик при нулевом напряжении. Работа выполнена в рамках государственного задания N 0023-2014-0188 по теме 20. 22 22 22 4 "Оптические, транспортные, магнитные и структурные свойства наноструктур на основе полупроводниковых, магнитных и сверхпроводниковых материалов". DOI: 10.21883/FTT.2017.10.44956.409

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“…26 The magnetic field can affect tunneling processes resulting from electric-field redistribution in the structure. 27 For both investigated mechanisms, the strong effect of the magnetic field can hardly be expected.…”

Section: The DC Magnetoresistive Effectmentioning

confidence: 99%

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

et al. 2017

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We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.

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Zero-Bias Tunneling Anomalies—Temperature, Voltage, and Magnetic Field Dependence

Cited by 156 publications

References 25 publications

The Kondo Effect in Non-Equilibrium Quantum Dots: Perturbative Renormalization Group

The Kondo Effect in Non-Equilibrium Quantum Dots: Perturbative Renormalization Group

Двухзонная сверхпроводимость кристаллов Sn-=SUB=-1-x-=/SUB=-In-=SUB=-x-=/SUB=-Te с T-=SUB=-c-=/SUB=-=3.6-3.8 K

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

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