2015
DOI: 10.1002/mop.29420
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Zero‐biased diode Schottky detector for low cost preamplified millimeter‐wave imaging

Abstract: Development of a sensitive Schottky detector using zero‐biased diode (ZBD) for preamplified millimeter‐wave imaging is presented. Low noise amplifier gain and detector responsivity, key parameters to the imaging module, are analyzed to get the sensitivity performance characterization. The detector integrates one ZBD, stripline filtering and matching elements, and finline transition on a thin Rogers substract. Methodology used to detector design is described here, including the determination and optimization of… Show more

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Cited by 5 publications
(5 citation statements)
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“…N is the number of fingers from anode to pad, N = 1, which are provided by VDI 7 . Besides the above analysis results, the calculation formula of zero bias junction capacitance is as follow, the zero bias junction capacitance, C j 0 = 4 fF . Cj0=()CtCpp/NCfp The detector consists of the RF probe, matching circuit, zero bias Schottky diode and low‐pass filter 8 . Based on the connected direction of each part, the transition model from waveguide to microstrip line adopts the E‐Plane RF probe 9 .…”
Section: Analysis and Designmentioning
confidence: 99%
“…N is the number of fingers from anode to pad, N = 1, which are provided by VDI 7 . Besides the above analysis results, the calculation formula of zero bias junction capacitance is as follow, the zero bias junction capacitance, C j 0 = 4 fF . Cj0=()CtCpp/NCfp The detector consists of the RF probe, matching circuit, zero bias Schottky diode and low‐pass filter 8 . Based on the connected direction of each part, the transition model from waveguide to microstrip line adopts the E‐Plane RF probe 9 .…”
Section: Analysis and Designmentioning
confidence: 99%
“…It is noteworthy that the information about dynamic range of the measuring system is often, not revealed in the literature dealing with power detector characterization. [1][2][3] The simulated and the measured results of output power versus input power, at 61 GHz (generated using 20.33 GHz signal from HP generator multiplied by 3) are depicted in Figure 4. A good concordance is achieved between measurement based on the above setup, and simulation using the diode model.…”
Section: Dynamic Range Measurementmentioning
confidence: 99%
“…For instance, in a receiver, signal strength is a key factor in maintaining reliable communications, whereas in the transmitter, the amount of power transmitted is critical due to the spectral regulation requirements. [1][2][3][4][5] Recently, several implementations of millimeter-wave RF power detector circuits based on different technologies have been proposed in the literature. [6][7][8][9] However, most of them are paying more attention to design technology, and only little information about the characterization methodology has been revealed.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Surface–channel‐etched Schottky diode has been developed by Bishop in 1987. Planar GaAs‐based Schottky diodes have been used in the design of mixers, detector, and frequency multipliers, which have been applied in millimeter wave, especially in terahertz systems . Terahertz (THz) science and technology is a new disciplinary subject and has been a research hotspot over the past 20 years.…”
Section: Introductionmentioning
confidence: 99%