Zero Chirp 10 Gb/s MQW InP Mach-Zehnder Transmitter with Full-Band Tunability

Abstract

Zero chirp operation across C-Band is reported for a 10 Gb/s zero-chirp MQW InP Mach-Zehnder modulator. The optimized design ensures low residual chirp over all wavelengths, confirmed by symmetric OSNR penalty measurements.

High performance travelling wave Mach-Zehnder modulators for emerging generations of high capacity transmitter components

“…Single InP-based Mach-Zehnder modulators have been improved considerably in recent years [1][2][3][4][5]. As a result, qualified high performance modulator modules for data rates of 10 -40 Gb/s became already commercially available.…”

“…For example, e/o bandwidths between 10 Gb/s and 100 Gb/s can be achieved only by adapting the device parameters accordingly, which in the best case requires only updates of specific dimensions on the photolithographic masks applied during fabrication. Based on the modulator design and technology described before, a large number of single high performance MZ modulators have been already demonstrated which allow for data rates up to 100 Gb/s [1][2][3][4][5]. For example, fabricated single 43 Gb/s chirp free modulators provide < 6 dB insertion losses (IL), ≥ 20 dB extinction ratios (ER), and ≤ 2.5 V driving voltages (V π ) across 40 nm wavelength C-band [2].…”

Technology options for future WDM-PON access systems

“…Developments are presently underway to enhance the performance and functionality of the DSBDR laser, including implementation in the AlGaInAs/InP material system, which will allow higher temperature operation, with correspondingly reduced cooling requirements [13] and the monolithic integration of a Mach-Zehnder modulator similar to those presently used in metronetwork 10Gbit/s systems [14]. A prototype integrated DSDBR-MZ chip is shown in figure 3.…”

Design of Low ${V}_{\pi}$ High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure

“…InP-based modulators are very attractive because they are generally more compact and have lower half-wavelength voltage compared with GaAs and LiNbO -based modulators. Ten-gigahertz InP Mach-Zehnder (MZ) intensity modulators using additional imbalance control electrodes and working with zero chirp across the whole -band have been reported [2]. Forty-gigahertz InP modulators have also been reported which use an n-i-n waveguide structure instead of the conventional p-i-n structure to reduce both the microwave and optical losses.…”