Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films

Tsubouchi, Kazuo; Mikoshiba, Nobuo

doi:10.1109/t-su.1985.31647

Cited by 458 publications

(206 citation statements)

References 27 publications

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“…In the simulation section, the elastic, piezoelectric, and dielectric constants of AlN are taken from Ref. 19. In particular, the nominal piezoelectric constants are d 33 = 5.5, d 31 = −2.6, and d 15 =4 pm/ V. These values were modified when the experimental data were fitted to the numerical calculations.…”

Section: B Simulationsmentioning

confidence: 99%

Simulation and laser vibrometry characterization of piezoelectric AlN thin films

Hernando

Sánchez‐Rojas

González-Castilla

et al. 2008

Journal of Applied Physics

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In this paper, the electric field induced deformations of sputter-deposited piezoelectric aluminum nitride thin films sandwiched between electrodes on top of a silicon substrate are studied by numerical calculations and scanning laser interferometric measurements. In our calculations based on the finite element method, the results show the displacement of the top and bottom surfaces of both the thin film and the substrate, for either a free or a perfectly clamped structure. The confirmation that the bottom surface of the film is deformed reveals the limitations of techniques that only access the top surface, as well as the double-beam interferometric configuration, under specific conditions. In addition, the simulations demonstrate the dependence of the displacements on the size of the upper electrode and the contribution of the transverse piezoelectric coefficient d 31 to the features of the displacement profiles. A laser scanning vibrometry technique was used to measure deformations on the top surface with subpicometer vertical resolution. By comparing the calculated and the experimental displacement profiles, an advanced approach is discussed to obtain accurate quantitative information of both coefficients d 31 and d 33 .

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Section: B Simulationsmentioning

confidence: 99%

Simulation and laser vibrometry characterization of piezoelectric AlN thin films

Hernando

Sánchez‐Rojas

González-Castilla

et al. 2008

Journal of Applied Physics

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“…Figure 4 shows a calculation of the two lowest symmetric (S0, S1) and antisymmetric (A0, A1) modes in the Mo/AlN/Mo plate, AlN (not including piezoelectricity) in the Wurtzite structure with the c-axis perpendicular to the plate surface. The elastic coefficients C IJ and density ρ used for this structure are depicted in table 1, the AlN data were taken from reference [9] and that for Mo from reference [10]. The thickness of the AlN layer used in the calculation was chosen so that the series resonance (thickness expansion mode in the normal direction) was at the experimentally determined frequency of 875 MHz.…”

Section: Lateral Mode Analysismentioning

confidence: 99%

Laser Acoustic Imaging of Film Bulk Acoustic Resonator (FBAR) Lateral Mode Dispersion

Telschow¹

2005

AIP Conference Proceedings

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ABSTRACT.A laser acoustic imaging microscope has been developed that measures acoustic motion with high spatial resolution without scanning. Images are recorded at normal video frame rates and heterodyne principles are used to allow operation at any frequency from Hz to GHz. Fourier transformation of the acoustic amplitude and phase displacement images provides a direct quantitative determination of excited mode wavenumbers at any frequency. Results are presented at frequencies near the first longitudinal thickness mode (~ 900 MHz) demonstrating simultaneous excitation of lateral modes with nonzero wavenumbers in an electrically driven AlN thin film acoustic resonator. Images combined at several frequencies form a direct visualization of lateral mode dispersion relations for the device under test allowing mode identification and a direct measure of specific lateral mode properties. Discussion and analysis of the results are presented in comparison with plate wave modeling of these devices taking account for material anisotropy and multilayer films.

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“…There are reports in the literature of high coupling coefficient, zero-temperature coefficient thin films, such as AlN over sapphire [6]. These materials will completely alleviate the temperature drift problem.…”

Section: Temperature Effects and Materials Choicementioning

confidence: 99%

Passive microwave tags : LDRD 52709, FY04 final report.

Brocato¹

2004

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Abstract:This report describes both a general methodology and specific examples of completely passive microwave tags. Surface acoustic wave (SAW) devices were used to make tags for both identification and sensing applications at different frequencies. SAW correlators were optimized for wireless identification, and SAW filters were developed to enable wireless remote sensing of physical properties. Identification tag applications and wireless remote measurement applications are discussed. Significant effort went into optimizing the SAW devices used for this work, and the lessons learned from that effort are reviewed.

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Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films

Cited by 458 publications

References 27 publications

Simulation and laser vibrometry characterization of piezoelectric AlN thin films

Simulation and laser vibrometry characterization of piezoelectric AlN thin films

Laser Acoustic Imaging of Film Bulk Acoustic Resonator (FBAR) Lateral Mode Dispersion

Passive microwave tags : LDRD 52709, FY04 final report.

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