“…Device structure (optimized strategy) Fabrication technique (perovskite/carbon) According to valence states, B-site ions substitution can be divided into three types: Ag + (1.15 Å) ion substitution; [230] divalent substitution, such as Sn 2+ (0.93 Å), [99,231,232] Mg 2+ (0.72 Å), [233,234] Ca 2+ (1.00 Å), [234] Sr 2+ (1.12 Å), [234] Ba 2+ (1.35 Å), [234] Mn 2+ (0.67 Å), [100,235] Ni 2+ (0.69 Å), [235] Cu 2+ (0.73 Å), [235] Zn 2+ (0.74 Å), [235][236][237] and Cd 2+ (0.95 Å); [238,239] multivalent substitution, such as Sb 3+ (0.92 Å), [160] In 3+ (0.81 Å), [203,240,241] Bi 3+ (1.08 Å), [242] Nb 5+ (0.64 Å), [51] and lanthanide ions (e.g., Eu 2+ (1.17 Å), La 3+ (1.03 Å), Sm 3+ (0.96 Å), Tb 3+ (0.92 Å), Ho 3+ (0.90 Å), Er 3+ (0.89 Å), Yb 3+ (0.87 Å), etc.). [180,[243][244][245] Considering that Sn and Pb belong to IVA group and possess similar ns 2 np 2 electronic configuration and coordination geometry, partially substituting Pb 2+ with Sn 2+ was considered as the most effective strategy to optimize the optoelectronic properties of CsBX 3 .…”