Zinc Doped of CdS Layers Deposited by Chemical Bath Deposition Method

Experimental and DFT studies of structural and optoelectronic properties of CdS, Zn doped CdS, and (Zn-Ni) co-doping CdS nanomaterials

“…Abuhusain et al found a band gap equal to 2.42 eV, which agrees with our result. For Zn-doped CdS, the value of the gap increases to 2.49 eV, and it is close to the value obtained by Zellagui et al for the same Cd 0.7 Zn 0.3 S alloys [63]. When adding the Ni to CdZnS material, the band gap decreases to 2.30 eV; the same behavior was observed by Raju et al [57].…”

“…For the reflectance spectra figures 4(c), (a) reduction was observed only for Zn and Ni doping at 3.0% wt and 1.0 wt%, respectively. The band gap for the different compositions is evaluated using equation (5) [61][62][63]:…”

Formation of wide-bandgap, highly transparent and compact Cd1−xZnxS films with dynamically controlled pH in chemical bath deposition

“…31 Most notably, poor coverage is a common problem while fabricating Cd 1Àx Zn x S films using the CBD technique, even with a low Zn content which becomes progressively more severe at a higher Zn content. 29,[32][33][34][35][36] Using the CBD method, Chavhan et al found nano-sheet (x = 0.05), flake (x = 0.1) and curly nano-sheet (x = 0.15) morphologies in low Zn containing films. 33 Also, a fully flower-like structure was found for a Cd 0.8 Zn 0.2 S film deposited using a bath with varying pH from 8.5 to 11 by Lilhare et al 36 Erturk et al noticed pin-holes and cracks on the Cd 1Àx Zn x S (x = 0.05) film surface 20 while fabricating the films by electrodeposition.…”