Zinc-indium-oxide: A high conductivity transparent conducting oxide

Phillips, Julia M.; Cava, R. J.; Thomas, G. A.; Carter, S. A.; Kwo, J.; Siegrist, T.; Krajewski, J. J.; Marshall, J. H.; Peck, W. F.; Rapkine, D. H.

doi:10.1063/1.115118

Cited by 200 publications

(127 citation statements)

References 9 publications

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“…Optimum deposition temperatures of 430˚C [6] and 450˚C [3] and a subsequent annealing in vacuum (∼10 −5 Torr) at about 377˚C [25] has been used for sprayed IZO thin films but there was no indication on their appearance. Other reducing environments such as 15% H 2 /N 2 or 100% N 2 , at temperatures between 300˚C and 450˚C have been also tried [19]. The doping level C In varied up to 3 at.%.…”

Section: Methodsmentioning

confidence: 99%

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Bel-Hadj-Tahar¹,

Mohamed²

2014

NJGC

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Transparent conducting films of zinc oxide and indium-doped zinc oxide have been prepared by a simple and economical sol-gel technique. This process is feasible for the fabrication of high quality TCO thin films when the processing parameters are optimized. It was found that the out-diffusion of oxygen during the vacuum annealing step was a crucial factor to prepare thin layer with superior properties. Annealing lowers the resistivity down to 4.7 10 −3 Ω•cm for the 1 at.% doped films due to the liberation of high-valency In-dopants and the enhanced film density. At high indium concentrations, the free electron density stabilizes because an increasing number of dopant atoms form some kinds of neutral defects. The neutralized indium atoms do not contribute free electrons. The feasibility to deposit highly transparent ZnO thin films has been demonstrated.

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Section: Methodsmentioning

confidence: 99%

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Bel-Hadj-Tahar¹,

Mohamed²

2014

NJGC

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“…The high optical transmittance of ITO films is a direct consequence of it being a wide band gap ͑3.5-4.06 eV͒ semiconductor: 13,14 the fundamental absorption edge lies in the ultraviolet region and shifts towards shorter wavelengths with an increase in carrier concentration due to the BursteinMoss effect. 15 Attempts have been made to improve the electrical and/or optical properties of ITO, depending on the technological application, by changing its composition to zinc-indium-tin-oxide, 16,17 or by ion implanting H 2 ϩ or O ϩ ions. 18 Apart from an early investigation 19 on the properties of ITO thin films prepared from targets with different In 2 O 3 /SnO 2 ratios in various dc sputtering plasma gases ͑in-cluding N 2 ), there have been no reports, to our knowledge, on indium-tin-oxynitride thin films.…”

Section: Introductionmentioning

confidence: 99%

Properties of rf-sputtered indium–tin-oxynitride thin films

Aperathitis

Bender

Cimalla

et al. 2003

Journal of Applied Physics

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Indium-tin-oxide ͑ITO͒ and indium-tin-oxynitride ͑ITON͒ thin films have been fabricated by rf-sputtering in plasma containing Ar or a mixture of Ar and N 2 , respectively. The structural, electrical and optical properties of ITON films were examined and compared with those of ITO films. The microstructure of ITON films was found to be dependent on the nitrogen concentration in the plasma. Increasing the amount of nitrogen in the plasma increased the resistivity and reduced the carrier concentration and mobility of the films. The electrical properties of the ITON films improved after annealing. The absorption edge of the ITON films deposited in pure N 2 plasma was shifted towards higher energies and showed reduced infrared reflectance compared to the respective properties of ITO films. The potential of indium-tin-oxynitride films for use as a transparent conductive material for optoelectronic devices is addressed.

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“…This is mostly due to the difficulties in achieving stable SCs that are fundamental for studying defects in semiconductors by junction spectroscopy techniques like admittance spectroscopy (AS) and deep level transient spectroscopy (DLT S). Below some of the main established results related to defects and impurities, relevant to this Group III elements on Zn site, Al Zn , Ga Zn and In Zn act as donors to ZnO resulting in n-type material with high conductivity and transparency in the visible wavelength range [28,29,30]. Their fingerprints in the band edge photoluminescence spectra have recently been attributed [2], while there is still some dispute on the assignment of the corresponding energy level position obtained from T DH measurements [1].…”

Section: Point Defects and Impurities In Znomentioning

confidence: 99%

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

Schifano¹,

Monakhov²,

Großner³

et al. 2007

Applied Physics Letters

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The formation of Schottky barrier contacts to hydrogen peroxide treated ZnO has been investigated. Low resistivity hydrothermally grown single crystal ZnO wafers of n-type were used. Pd contacts deposited on organic solvent cleaned O face (0001¯) showed Ohmic behavior, while on the H2O2 treated O face up to nine orders of magnitude in rectification of the current was obtained for biases of −2 and +2V. Concurrently, the surface roughness increases from 1.0±0.5 up to 2.0±0.5nm due to the H2O2 treatment. A majority of the contacs deposited were stable or improved their performance by annealing in air at 200°C for 30min. However, the contacts both before and after the annealing exhibited ideality factors of at least ∼1.8 at +0.5V suggesting that the current transport cannot be described as purely thermionic. Finally, results of capacitance versus voltage and capacitance versus temperature measurements are discussed and show a dominant electron state at ∼0.32eV below the conduction band edge.

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Zinc-indium-oxide: A high conductivity transparent conducting oxide

Cited by 200 publications

References 9 publications

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Properties of rf-sputtered indium–tin-oxynitride thin films

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

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