Zinc Oxide: A Fascinating Material for Photovoltaic Applications

Kumari, Premshila; Srivastava, Avritti; Sharma, Raksha; Sharma, Deepak; Srivastava, Sanjay K.

doi:10.1007/978-981-19-0553-7_6

Cited by 7 publications

(3 citation statements)

References 333 publications

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“…Particularly, the integration of metal oxide on rigid or flexible substrates has been a key focus of research and development [8,9]. In this regard, zinc oxide (ZnO) has emerged as a highly preferred material for various applications such as photovoltaics, photodetection, and photocatalysis, thanks to its favorable properties including a wide bandgap, long-term chemical stability, easy availability, and non-toxicity [10]. Additionally, the optical and electrical properties of ZnO can be optimized by doping with some elements including manganese (Mg) [11], cobalt (Co) [12], aluminum (Al) [13], gallium (Ga) [14], indium (In) [15], and tungsten (W) [16].…”

Section: Introductionmentioning

confidence: 99%

UV photodetectors based on W-doped ZnO thin films

Jalal,

Ozel,

Atilgan

et al. 2024

Nanotechnology

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W-doped ZnO thin films deposited on Si substrates with (100) orientation by sol–gel spin coating method at temperature 500 °C. W/Zn atomic ratio varies from 0% to 4%. Then, the UV detection performance analysis of p–n heterojunction UV photodetectors based on W-doped ZnO/Si is analyzed. The current–voltage curves of W-doped ZnO/Si are investigated in dark and exhibit diode-like rectifying behavior. Among doped ZnO/Si, sample with atomic ratio of W/Zn = 2% is the best candidate to study photodetector characteristics in UV range. The resulting device exhibits a rectification ratio RR of 5587 at ±5 V, a higher responsivity of 3.84 A W−1 and a photosensitivity value of 34 at 365 nm under 0.5 mW cm−2. The experimental findings reveal that the UV detection performance of the heterojunction-based photodetectors strongly dependent on the properties of metal oxide layer. The main goal of this work is to investigate the effect of W doping on the performance of ZnO/Si based photodetectors. Based on our results, it is observed that 2 at% of W dopant is the optimum amount of doping for high performance photodetector of ZnO:W/Si heterojunction thanks to the suppressed recombination ratio and enhanced carrier separation properties in the depletion zone.

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Section: Introductionmentioning

confidence: 99%

UV photodetectors based on W-doped ZnO thin films

Jalal,

Ozel,

Atilgan

et al. 2024

Nanotechnology

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“…In the transition metal oxide's group, zinc oxide (ZnO) has been widely explored in the literature. Different nanostructures of ZnO have been used in a variety of applications such as sensors [6], photocatalysis [7], solar cells [8], photodetectors, and resistive switching memory applications [9]. Their candidature for different applications can be justified as they have a large exciton binding energy (60 meV), good electron transport ability, environment friendliness, and a large band gap (3.37 eV) [10, 11].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of electrical properties by CuS–PVP nanocomposite on the ZnO/polymer heterojunction

Verma,

Hmar,

Swart

et al. 2024

J Chinese Chemical Soc

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A nanocomposite matrix of covellite–polyvinylpyrrolidone (CuS–PVP) was synthesized through a solution processing method and applied via spin coating onto hydrothermally grown zinc oxide (ZnO) nanorods. Characterization techniques, including X‐ray powder diffraction and scanning electron microscopy, confirmed the successful decoration of chain‐like CuS–PVP polymer composites onto hexagonal ZnO nanorods. The UV‐vis spectroscopy revealed an absorption peak at 372 nm, indicating excitonic absorption of ZnO, and a reduction in the band gap from 3.11 to 2.59 eV upon CuS–PVP polymer decoration, enhancing light harvesting efficiency. Photoluminescence spectra demonstrated the lowest charge carrier recombination rate in the ZnO/CuS–PVP sample, promoting efficient charge separation and transportation, supported by Fourier‐transform infrared analysis indicating chemical bonding. Subsequently, the impact of CuS–PVP as an insertion layer in the ZnO/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS) inorganic–organic heterojunction was investigated. Favorable band alignment between ZnO, CuS–PVP, and PEDOT:PSS improved conduction, increasing current from 0.3394 to 1.14 mA for D2 (poly‐ethyleneterephthalate/Indium tin oxide/ZnO/PEDOT:PSS/Al) and D1 (poly‐ethyleneterephthalate/Indium tin oxide/ZnO/CuS–PVP/PEDOT:PSS/Al) at a +2 V bias. Transient photo‐responses (J–t) at 0 V bias revealed decreased rise and fall times from 0.382 and 1.154 s to 0.301 and 0.229 s for D2 and D1 devices, respectively. This novel approach provides control over charge carrier transport characteristics at the interface, potentially benefiting self‐powered photo‐detection in optoelectronic devices.

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“…Zinc oxide (ZnO) is a versatile semiconductor material with a direct wide bandgap of 3.37 eV, making it ideal for optoelectronic applications such as UV photodetectors, lasers, and LEDs. Zinc oxide's high exciton binding energy of around 60 meV at room temperature facilitates the efficient detection of gas molecules in gas sensing applications [1,2]. Additionally, zinc oxide (ZnO) possesses a wurtzite structure with a hexagonal lattice, where the lattice constants a and c are 0.325 nm and 0.521 nm, respectively [3].…”

Section: Introductionmentioning

confidence: 99%

Investigation of physicochemical characteristics of Dy³⁺ modified ZnO nanoparticles

Kumar,

Singh

2024

Phys. Scr.

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In this report, pristine and Dy3+ modified ZnO nanoparticles [Zn(1-x)DyxO NPs, where x = 0, 0.05, and 0.10] were synthesized using the sol-gel route, and their physicochemical characteristics were investigated. X-ray diffractograms of all the compositions possess P63mc space group depicting hexagonal crystallinity with wurtzite-type crystal structure with no signature of impurities as confirmed using the Rietveld refinement technique. The granular microstructure displayed grain growth with Dy3+ incorporation in the ZnO crystal framework and an increment in average grain size was found to be 22.83 nm for x = 0 to 36.34 nm. The optical energy band gap also increased from 3.35 eV to 3.88 eV with Dy3+ doping in the host ZnO. Dy3+ substitution inhibits the conduction in ZnO and improves the resistivity (36 Ωcm – 79 Ωcm) as carrier concentration diminishes from 7.36×1016 cm-3 to 4.23×1016 cm-3. Similarly, the mean free path length for ZnO and Dy3+ doped ZnO NPs declines from 0.0301 nm to 0.0198 nm. Dielectric properties of all the compositions were investigated using an LCR impedance analyzer and it was observed that Dy3+ substitution enhances the value of the dielectric constant from 32 to 91 with a low tangent loss at 50 Hz.

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Zinc Oxide: A Fascinating Material for Photovoltaic Applications

Cited by 7 publications

References 333 publications

UV photodetectors based on W-doped ZnO thin films

UV photodetectors based on W-doped ZnO thin films

Enhancement of electrical properties by CuS–PVP nanocomposite on the ZnO/polymer heterojunction

Investigation of physicochemical characteristics of Dy³⁺ modified ZnO nanoparticles

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Zinc Oxide: A Fascinating Material for Photovoltaic Applications

Cited by 7 publications

References 333 publications

UV photodetectors based on W-doped ZnO thin films

UV photodetectors based on W-doped ZnO thin films

Enhancement of electrical properties by CuS–PVP nanocomposite on the ZnO/polymer heterojunction

Investigation of physicochemical characteristics of Dy3+ modified ZnO nanoparticles

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Investigation of physicochemical characteristics of Dy³⁺ modified ZnO nanoparticles