2017
DOI: 10.1007/s11664-017-5369-0
|View full text |Cite
|
Sign up to set email alerts
|

Zinc Oxide Nanorods Grown on Printed Circuit Board for Extended-Gate Field-Effect Transistor pH Sensor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

1
12
0
1

Year Published

2018
2018
2023
2023

Publication Types

Select...
5
1
1

Relationship

0
7

Authors

Journals

citations
Cited by 22 publications
(14 citation statements)
references
References 38 publications
1
12
0
1
Order By: Relevance
“…The hydrothermal method has been widely used in producing ZnO nanostructures by using a simple, safe and low-cost technique on different kinds of substrates such as GaN, Si, sapphire, ITO and FTO. Recently, ZnO nanorods (NRs), nanotubes were successfully grown on Printed circuit board (PCB) substrate [8][9][10] which is costeffective, and commonly used in electronic circuit and optoelectronics devices. In this work, a seedless hydrothermal method was elevated by implementing a galvanic cell structure in non-saturated equimolar aqueous solutions of zinc nitrate hexahydrate (Zn[NO 3 ] 2 •6H 2 O) and hexamethylenetetramine (C 6 H 12 N 4 ) [9].…”
Section: Introductionmentioning
confidence: 99%
“…The hydrothermal method has been widely used in producing ZnO nanostructures by using a simple, safe and low-cost technique on different kinds of substrates such as GaN, Si, sapphire, ITO and FTO. Recently, ZnO nanorods (NRs), nanotubes were successfully grown on Printed circuit board (PCB) substrate [8][9][10] which is costeffective, and commonly used in electronic circuit and optoelectronics devices. In this work, a seedless hydrothermal method was elevated by implementing a galvanic cell structure in non-saturated equimolar aqueous solutions of zinc nitrate hexahydrate (Zn[NO 3 ] 2 •6H 2 O) and hexamethylenetetramine (C 6 H 12 N 4 ) [9].…”
Section: Introductionmentioning
confidence: 99%
“…Hence, a linear fit is more accurately represented by fitting a √ I ds versus pH plot with S units in A 1/2 pH −1 . An example plot has been previously reported by Batista and Mulato in 2005, for EGFET's S in saturation, and reported values in A 1/2 pH −1 lie between 0.26 and 1.36 µA 1/2 pH −1 . The process of getting a physically meaningful S in mV pH −1 from the EGFET I ds versus V ds output plot will be discussed with the relevant results.…”
Section: Resultsmentioning
confidence: 71%
“…Figure e,f provides similar plots for the ZnO EGFET in linear mode ( V ref = 3 V, V ds = 0.3 V) and all instances are given in Figure S4e–h (Supporting Information). S extraction in linear mode is typically reported by choosing a fixed drain current value and identifying the intersection points with V ref for different pH values . Nonetheless, this method is not recommended for two reasons.…”
Section: Resultsmentioning
confidence: 99%
“…ZnO nanoproducts were prepared by hydrothermal method assisted with galvanic effect [8,10]. First, the print circuit boards served as substrates were polished by fine sand paper to remove oxide and any surface cover on top of copper layer.…”
Section: Methodsmentioning
confidence: 99%
“…ZnO is a potential candidate because it is convenient to fabricate, environmental friendly, economical, diversity in size and shape of available nanostructures [5][6][7][8][9]. In this research, ZnO nanoflowers were fabricated by a simple hydrothermal process assisted with galvanic effect.…”
Section: Introductionmentioning
confidence: 99%