Zinc Oxide Transistors

Rare-earth element of gadolinium (Gd) were successfully doped into zinc oxide (ZnO) using dual sputter source of DC and RF sputtering. The substrate rotation speed was controlled from 1 rpm to 9 rpm to investigate their effects on the properties of the films in order to achieve a great feature of thin film. XRD profiles confirmed the c-axis orientation with structure of ZnO hexagonal wurtzite. No peaks related to secondary phases were observed. The intensity of dominant peak showed increment upon improvement of substrate rotation speed. The incorporation of Gd into ZnO structure was further confirmed by composition element form EDX with average atomic percentage of 3 at. % for all the films. Surface topology from AFM images showed the grain size has increased with the higher speed of substrate rotation. Gd-doped ZnO thin films indicated good transparency with an average transmittance above 90 % regardless of substrate rotation speed. The bandgap has a slight decrease from 3.06 eV to 3.03 eV with an increment speed of rotational substrate. These findings further imply that the substrate rotation speed has a significant influence on the structural and optical properties of the sputtered thin films.

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Influence of Substrate Rotational Speed on the Structural and Optical Properties of Sputtered Gd-Doped ZnO Thin Films

Raship

Tawil

Nayan

et al. 2021

MSF

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Zinc Oxide Transistors

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References 97 publications

Influence of Substrate Rotational Speed on the Structural and Optical Properties of Sputtered Gd-Doped ZnO Thin Films

Influence of Substrate Rotational Speed on the Structural and Optical Properties of Sputtered Gd-Doped ZnO Thin Films

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