Zinc selenide and zinc telluride

Godlewski, M.; Guziewicz, E.; Ivanov, V. Yu.

doi:10.1201/9781420033410.ch3

Cited by 2 publications

(2 citation statements)

References 42 publications

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“…We have recently observed a similar situation for thin films of ZnSe and we demonstrated that these films are attractive sources of a white light emission [13].…”

Section: Optical Properties Of Nanoparticlesmentioning

confidence: 70%

Growth and Characterization of ZnO Nanoparticles

et al. 2005

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In this work we evaluate structural and optical properties of ZnO nanoparticles grown by wet chemistry method. Light emission properties of these nanoparticles are studied with cathodoluminescence and microphotoluminescence. Even at the room temperature excitonic emission is well resolved, due to high exciton binding energy of ZnO. Decay kinetics of photoluminescence emissions and efficiency of inter-nanoparticles energy migration is evaluated from maps of in-plane variations of photoluminescence decay times measured in microphotoluminescence setup.

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“…We have recently observed a similar situation for thin films of ZnSe and we demonstrated that these films are attractive sources of a white light emission [13].…”

Section: Optical Properties Of Nanoparticlesmentioning

confidence: 70%

Growth and Characterization of ZnO Nanoparticles

et al. 2005

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“…Based on PL spectra we have made preliminary calculations of color temperature of light emitted in ZnSe/GaAs PL process (method of colorimetric calculations we described elsewhere [14]). Calculations show that ZnSe/GaAs layers of different thicknesses produce light output with the range of color temperature of 2400-4000 K, though T col does not necessarily scale with the layer thickness.…”

Section: Optical Characterizationmentioning

confidence: 99%

Tuning of Color Chromaticity of Light Emission from ZnSe Films Grown on a GaAs Substrate by Atomic Layer Epitaxy

et al. 2006

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Monocrystalline films of sphalerite-type ZnSe were grown on GaAs(100) substrates from elemental Zn and Se precursors by atomic layer epitaxy in a gas flow system. Due to color mixing of band edge and deep defect-related emissions these layers emit intensive white light. Depth profiling cathodoluminescence indicates that green and red emissions mostly come from disordered regions of the films, close to the ZnSe/GaAs interface. We tested a possibility of tuning of chromaticity coordinates and of color temperature of the emission. We found that the chromaticity parameters (color perception) can be tuned by either regulating the appropriate accelerating voltage of electrons or current density of primary electrons in cathodoluminescence investigations. These properties of ZnSe films make them suitable for some practical applications as white light sources.

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Zinc selenide and zinc telluride

Cited by 2 publications

References 42 publications

Growth and Characterization of ZnO Nanoparticles

Growth and Characterization of ZnO Nanoparticles

Tuning of Color Chromaticity of Light Emission from ZnSe Films Grown on a GaAs Substrate by Atomic Layer Epitaxy

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