Zintl
phases, owing to their complex crystal structures and intricate
chemical bonding, have recently been recognized as promising candidates
for thermoelectric (TE) applications. Band engineering, including
band convergence, has been shown to be an effective way to enhance
the thermoelectric performance of such materials. In this work, a
series of emerging TE materials, the isostructural Zintl phases with
the general formula A2CdP2 (A = Sr, Ba, Eu),
are presented for the first time. Their structures, established from
single-crystal X-ray diffraction methods, show them to crystallize
with the orthorhombic Yb2CdSb2 structure type,
with first-principles calculations on phase stability confirming that
Ba2CdP2 and Sr2CdP2 are
thermodynamically stable. Computationally, it was found that both
Ba2CdP2 and Sr2CdP2 have
the potential to exhibit high n-type TE performance (0.6 and 0.7 relative
to the n-type PbTe, a reference TE material). To optimize the TE performance,
band engineering strategies, including isovalent substitution and
cation mutations, were investigated. From the band engineering of
Ba2CdP2
via isovalent substitution
of Sr on a single Ba site, leading to the quaternary composition SrBaCdP2, it can be suggested that increasing the conduction band
valley degeneracy is an effective way to improve the n-type TE performance
by 3-fold. Moreover, first-principles defect calculations reveal that
both Ba2CdP2 and SrBaCdP2 are n-type
dopable, adding these compounds to a small list of rare n-type dopable
Zintl phases. The band engineering strategies used in this work are
equally applicable to other TE materials, either for optimization
of existing TE materials or designing new materials with desired properties.