Zn-doped CdO effects on the optical, electrical and photoresponse properties of heterojunctions-based photodiodes

Gozeh, Bestoon Anwer; Karabulut, Abdulkerim; Ismael, Cheman Baker; Saleh, Sarwar Ibrahim; Yakuphanoğlu, F.

doi:10.1016/j.jallcom.2021.159624

Cited by 34 publications

(7 citation statements)

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“…The current amounts have increased clearly at reverse biases for increasing light power because electron-hole pairs have formed in the interface of the diodes [28]. In this region, fast current increase appeared for a specific light power illumination condition, and then current values stayed flat after almost −1 V. The increase at current amounts of fabricated Ag/ZnO/p-Si heterostructure for reverse biases with increasing light power intensity highlighted photodiode behavior [29]. In the case of forward biases, there can be seen fast increase at current amount after a threshold voltage value due to Schottky diode behavior of Ag/ZnO/p-Si heterostructure, and then bending occurred owing to series resistance effect.…”

Section: Resultsmentioning

confidence: 89%

Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum

Yıldız,

Kocyigit,

Yıldırım

2023

Phys. Scr.

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Photodiodes have gained great attention for lightning control and optical communication over the last two decades. To obtain faster and more sensitive photodiodes are important for industrial applications. In this study, atomic layer deposition (ALD) technique was used to fabricate ZnO interlayer on p-Si, and thermal evaporation technique was employed to deposit Ag rectifying and Al ohmic contacts on ZnO surface and back surface of p-Si, respectively. The UV-Vis spectrometer was used to characterize optical behaviors of the ZnO interlayer. I-V measurements were conducted to characterize of Ag/ZnO/p-Si heterostructure for various solar light power intensities of dark, 20, 40, 60, 80 and 100 mW/cm2 and at various wavelengths from 351 nm to 800 nm by 50 nm intervals. According to I-V characteristics, the device exhibited increasing current at reverse biases depending on increasing light power intensity, and this confirmed photodiode behavior. Various diode parameters such as rectifying ratio, threshold voltage, series resistance, barrier height, etc. were determined and discussed in details from forward bias characteristics to investigate diode characteristics of the Ag/ZnO/p-Si heterostructure. The photodetection parameters such as responsivity, specific detectivity and external quantum efficiency (EQE) also were investigated. The Ag/ZnO/p-Si heterostructure exhibits good detection performance at all visible range and can be good candidate for optoelectronic applications.

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Section: Resultsmentioning

confidence: 89%

Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum

Yıldız,

Kocyigit,

Yıldırım

2023

Phys. Scr.

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“…The n values were determined as 2.56, 2.45 and 3.22, for 1%, 3% and 5%, respectively according to ZnO ratio. This case is attributed to the nonideal behavior (current transportation) of poly(AAm-co-HEMA)-ZnO based Si heterojunction diodes, considering the inhomogeneous barrier distribution, series resistance, interface film layer, tunneling effect and interface states, recombination and minority carrier injection [22][23][24]. The ideality factor was found to be 2.36 for the diode based on ZnO thin films synthesized by thermal decomposition method and formed on p-Si [25].…”

Section: Resultsmentioning

confidence: 99%

poly(acrylamide-co-2-hydroxyethyl methacrylate: Biocompatible ZnO nanocomposites based electrooptic devices for photonic applications

Soylu

2022

Preprint

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poly(AAm-co-HEMA)-ZnO is synthesised by hydrothermal method. poly(AAm-co-HEMA)-ZnO nanocomposite is coated by the drop casting technique on p-Si substrate. The current-voltage (I–V) measurements of Al/poly(AAm-co-HEMA)-ZnO/p-Si heterojunction diodes with (a) 1%, (b) 3% and (c) 5% ZnO are carried out in the dark and illumination intensities of 20–100 mW/cm2 with 20 mW/cm2 steps. It is seen that the optimized or high rectification ratio is possible to obtain in metal/p-Si contacts by suitably choosing ZnO rate in poly(AAm-co-HEMA)-ZnO nanocomposite. The I-V characteristics show exactly the characteristic feature of a photodiode. It is seen that the detectivity (D) and photosensitivity (PS) are more efficient than that of the structure formed without any of the components of nanocomposite. The interface state density (Dit) varies depending on the amount of ZnO in poly(AAm-co-HEMA). Results show that poly(AAm-co-HEMA)-ZnO can be employed in the design of optoelectronic devices, as well as biomedical applications as biomaterial.

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“…The exponent m was 1.01 and 1.13 for Alq 3 /p-Si and Alq 3 :Y 2 O 3 /p-Si, respectively. The m values indicated that the trap centers inside the energy gap are responsible for enhancement of the photosensitivity. − …”

Section: Resultsmentioning

confidence: 99%

Impact of Y₂O₃ Nanosheets on the Microstructural Characteristics of Alq₃ Prepared via the Co-precipitation Route for Enhancement of Photodiode Performance

Siddiq,

Sopaih,

Elgazzar

2023

ACS Omega

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In the present study, tris-(8-hydroxyquinoline) aluminum (Alq 3 ) and tris-(8hydroxyquinoline) aluminum/yttrium oxide Alq 3 /Y 2 O 3 were synthesized by a facile chemical route. The crystal structure, surface morphological nature, and particle size were identified by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) micrographs. Ag/Alq 3 /p-Si/Al and Ag/Alq 3 :Y 2 O 3 /p-Si/Al diodes were fabricated by the thermal evaporation technique and the electrical characteristics were evaluated from the I−V plots in dark and under illumination intensity. Thermionic emission theory, Cheung−Cheung, and Nord model have been applied to define the main electronic parameters like series resistance (R s ), barrier height (ϕ b ), and ideality factor (n). The hybrid Ag/Alq 3 :Y 2 O 3 /p-Si/Al diode revealed a nonideal behavior with high shunt resistance R sh and good photocurrent sensitivity. The C/G−V analysis indicated that both C and G are strongly affected by the presence of trapped charge carriers at the interface states. The obtained results indicated that R s was decreased whereas the carrier concentration (N a ) was increased by loading Y 2 O 3 nanosheets.

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Zn-doped CdO effects on the optical, electrical and photoresponse properties of heterojunctions-based photodiodes

Cited by 34 publications

References 50 publications

Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum

Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum

poly(acrylamide-co-2-hydroxyethyl methacrylate: Biocompatible ZnO nanocomposites based electrooptic devices for photonic applications

Impact of Y₂O₃ Nanosheets on the Microstructural Characteristics of Alq₃ Prepared via the Co-precipitation Route for Enhancement of Photodiode Performance

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Zn-doped CdO effects on the optical, electrical and photoresponse properties of heterojunctions-based photodiodes

Cited by 34 publications

References 50 publications

Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum

Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum

poly(acrylamide-co-2-hydroxyethyl methacrylate: Biocompatible ZnO nanocomposites based electrooptic devices for photonic applications

Impact of Y2O3 Nanosheets on the Microstructural Characteristics of Alq3 Prepared via the Co-precipitation Route for Enhancement of Photodiode Performance

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Impact of Y₂O₃ Nanosheets on the Microstructural Characteristics of Alq₃ Prepared via the Co-precipitation Route for Enhancement of Photodiode Performance