Zn-doped CdS/CdSe as efficient strategy to enhance the photovoltaic performance of quantum dot sensitized solar cells

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

“…By incorporating quantum dots into active layers, the following effects were observed: boosted exciton formation, minimized interface charge recombination, and increased charge transport. This was also demonstrated by Lv and co-workers [ 65 ]. The LUMO level of QD600 is lower than that of the donor P3HT, while the other QDs have higher LUMO levels.…”

Structurally optimized intrinsic defect carbon driven polysulfide reduction reaction for quantum dot sensitized solar cells

“…1,2 Many efforts have been made to optimize various components of QDSSCs for excellent photovoltaic performance, including the structural design of photoanodes, the exploration and modification of various types of redox electrolytes, and the selection and optimization of counter electrode (CE) catalysts. 3,4 Notably, CEs play a vital role in collecting photoinduced charges from the external circuit and then catalyze the reduction reaction of the oxidized electrolyte (such as S n 2− ions) at the CE/electrolyte interface, which can dramatically affect the short-circuit current density and filling factor of the device. 5 In order to obtain a superior photovoltaic performance, it requires that the CE possesses outstanding catalytic activity, excellent electrical conductivity, great mechanical and chemical stability, and a high surface area.…”

Engineering the synthesized colloidal CuInS2 passivation layer in interface modification for CdS/CdSe quantum dot solar cells

“…15 Huang's group has assembled the QDSCs with Zn-doped CdS/CdSe QD sensitizers presenting a maximum PCE of 5.59%, which indicates the potential application of QDSCs in future. 16 However, there are several reasons that drag down the photoconversion efficiency of QDSCs, including required electron harvesting from QDs to the electron transport layer, the narrow light adsorption range of the QD absorber, and high charge recombination at the interfaces of MOS/QDs, QDs/electrolyte, and QDs/QDs. Among the above factors, the charge recombination at different interfaces is the main factor that we need to consider.…”

“…15 Huang's group has assembled the QDSCs with Zn-doped CdS/CdSe QD sensitizers presenting a maximum PCE of 5.59%, which indicates the potential application of QDSCs in future. 16…”