Zn_1-XCd_XSe (X=0.2-0.3) Single-Quantum-Well Laser Diodes without GaAs Buffer Layers

Abstract

An analysis is presented of the rtlect of electron-dislocation scattering on the temperature-dependent part of the electrical resistivit) of the noble metals a t low temperatures. The basic idea is that for an) given sample. the degree to a h i c h the relaxation time iaries over the Fermi surface is determined bq the 'competition' between small-angle electron-dislocation scattering and large-angle electron-impurity scattering. Detailed calculations of the low-temperature resistivity are carried out. based on the variational method. that jield quantitative agreement Hith the recent resistivity data for Ag and Cu. T h e analjsis also leads to the following results. (i) For the ultra-pure samples. the residual dislocations are shown to eliminate the T4 dependence that characterises the resistivit) of the less pure samples. (ii) Electron-dislocation scattering is s h o a n to produce a variety of possible deviations from Matthiessen's rule (DMR), including large negative DMR. small positive DMR or even a complete absence of DMR. in agreement with the resistivity data for strained samples of Ag and AI. (iii) Dislocations are shown t o increase the magnitude of the electron-electron scattering term for the noble metals. in agreement with the recent Kaveh-Wiser theor).