ZnGeAs&lt;inf&gt;2&lt;/inf&gt; thin films properties: A potentially useful semiconductor for photovoltaic applications

Peshek, Timothy J.; Tang, Zhizhong; Zhang, L.; Singh, Rakesh Kumar; To, Bobby; Gessert, T. A.; Coutts, T. J.; Newman, Nathan; Schilfgaarde, Mark van

doi:10.1109/pvsc.2009.5411281

Cited by 5 publications

(1 citation statement)

References 7 publications

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“…High non-linear birefringence was observed for CdGeAs 2 with the birefringence tensor component, d 36 , as high as d 36 = 236 pm V −1 [2] which makes CdGeAs 2 suitable for being used in devices doubling the frequency of the laser light for the lasers operating in the mid-infrared region. II-IV-V 2 materials are known for high photovoltaic efficiency [3][4][5], and show a broad range of optical transparency ranging from 2.3 μm up to 18 μm [4] in CdGeP 2 crystals. The optical properties give a chance for their use in photovoltaics.…”

Section: Introductionmentioning

confidence: 99%

Composite Zn_1−xCd_xGeAs₂semiconductors: structural and electrical properties

Kilański

Reszka

Górska

et al. 2016

J. Phys.: Condens. Matter

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We present the studies of structural, transport and magnetotransport properties of [Formula: see text]Cd GeAs crystals with the chemical content changing from 0 to 1. The structural studies indicate that this alloy exists as a composite two-phase material in almost the entire range of average chemical compositions. The two phase nature of our samples does have a significant influence on the carrier transport and magnetotransport of the composite alloy. The change of the conductivity type is observed at room temperature, from p-type for [Formula: see text] to n-type for x > 0.18, respectively. The Hall carrier mobility measured at room temperature decreases as a function of x from about 35 cm (V · s) for the sample with x = 0 down to 3 cm (V · s) for the sample with x = 0.233. For x > 0.233 the Hall carrier mobility shows an increase with x, up to the highest value around 875 cm (V · s) observed for the sample with x = 1. Temperature dependent resistivity measurements indicate the presence of thermal activation of carriers with activation energy, E , with values from 20 to 30 meV for all the studied samples. The temperature dependent Hall effect data show that the grain boundary limited transport is strong in all our samples. For the samples with [Formula: see text] the negative MR is observed at temperatures lower than 100 K and at low magnetic field values, [Formula: see text] T. This effect is interpreted as a weak localization phenomenon with low values of phase coherence length, [Formula: see text] nm.

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