ZnO and Its Applications

Ellmer, K.; Klein, Andreas

doi:10.1007/978-3-540-73612-7_1

Cited by 123 publications

(134 citation statements)

References 150 publications

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“…With increasing substrate temperature, the diffusion of sputtering species is enhanced and the grains become bigger. However, there is a significant increase in FWHM and grain size becomes smaller when the substrate temperature exceeds 250 ℃; the result is similar to those of literatures [11,12,18]. This fact implies the substrate temperature have a remarkable effect on the structure of ZnO, therefore, high crystalline ZnO films required optimum substrate temperature.…”

Section: Methodssupporting

confidence: 88%

Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

Wang

Zhang

2009

J. Phys.: Conf. Ser.

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Section: Methodssupporting

confidence: 88%

Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

Wang

Zhang

2009

J. Phys.: Conf. Ser.

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“…Usually ZnO adopts a hexagonal (wurtzite) crystal structure and presents n-type conductivity due to residual donors [1][2][3][4]. It is an interesting material for short-wavelength optoelectronic applications owing to its wide band gap 3.37 eV [5][6][7], large bond strength, large exciton binding energy (60 MeV) at room temperature, non toxic and abundant in nature [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of ZnO and Co Doped ZnO Thin Films Prepared by Sol-Gel

et al. 2018

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We report on ZnO films doped with different Co concentrations (0, 0.5, and 1 wt%) prepared by sol-gel technique in association with dip-coating onto glass substrates. Zinc acetate dehydrate, cobalt acetate, mono ethanolamine were used as starting materials, as well as solvent and stabilizer, respectively. Nanostructured polycrystalline ZnO thin films with different concentrations of Co doping (0, 0.5, and 1 wt%) are prepared for the first time by the sol-gel method and annealed at 500• C for 1 h. The surface morphologies of the ZnO thin films deposited on glass substrate with different concentrations were evaluated by atomic force microscopy. The optical absorption of the films showed a blue shift of the band gap. The photoluminescence signal of the thin films of undoped and Co-doped ZnO presents different bands in the visible region. The electrical conductivity of the sample with 0.5%Co was found to be 4.62 (Ω C m) −1 .

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“…According to theory of charge carrier transport in wide band gap semiconductors, mobility indeed strongly depends on temperature. 40,41 Here, we will employ that theory in order to understand the results for LaBr 3 :0.2% Ce 3þ in Fig. 8.…”

Section: Discussionmentioning

confidence: 99%

“…Emission of optical phonons is the main mechanism responsible for carrier scattering by the lattice which is independent on the carrier concentration. 40 The main lattice scattering mechanism is due to the interaction of carriers with the longitudinal-optical phonons. According to Ref.…”

Section: Discussionmentioning

confidence: 99%

Energy resolution and related charge carrier mobility in LaBr3:Ce scintillators

Khodyuk

Quarati

Alekhin

et al. 2013

Journal of Applied Physics

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The scintillation response of LaBr 3 :Ce scintillation crystals was studied as function of temperature and Ce concentration with synchrotron X-rays between 9 keV and 100 keV. The results were analyzed using the theory of carrier transport in wide band gap semiconductors to gain new insights into charge carrier generation, diffusion, and capture mechanisms. Their influence on the efficiency of energy transfer and conversion from X-ray or c-ray photon to optical photons and therefore on the energy resolution of lanthanum halide scintillators was studied. From this, we will propose that scattering of carriers by both the lattice phonons and by ionized impurities are key processes determining the temperature dependence of carrier mobility and ultimately the scintillation efficiency and energy resolution. When assuming about 100 ppm ionized impurity concentration in 0.2% Ce 3þ doped LaBr 3, mobilities are such that we can reproduce the observed temperature dependence of the energy resolution, and in particular, the minimum in resolution near room temperature is reproduced. V C 2013 AIP Publishing LLC. [http://dx

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ZnO and Its Applications

Cited by 123 publications

References 150 publications

Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

Structural and Optical Properties of ZnO and Co Doped ZnO Thin Films Prepared by Sol-Gel

Energy resolution and related charge carrier mobility in LaBr3:Ce scintillators

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