2017
DOI: 10.1088/1674-1056/26/4/047703
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ZnO-based deep-ultraviolet light-emitting devices

Abstract: Deep-ultraviolet (DUV) light-emitting devices (LEDs) have a variety of potential applications. Zinc-oxide-based materials, which have wide bandgap and large exciton binding energy, have potential applications in high-performance DUV LEDs. To realize such optoelectronic devices, the modulation of the bandgap is required. This has been demonstrated by the developments of Mg x Zn 1−x O and Be x Zn 1−x O alloys for the larger bandgap materials. Many efforts have been made to obtain DUV LEDs, and promising successe… Show more

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Cited by 41 publications
(18 citation statements)
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“…By combining the band‐gaps from ultraviolet–visible absorption spectra and VBM data from UPS spectra, the energy levels of four functional layers were calculated and the schematic band alignment was drawn with respect to the vacuum level (Figure b) assuming that there are no imperfections at the heterointerfaces. In the present case, the ZnO NWs could be deemed as an electron‐providing layer and a transparent photon guider . The thin MgZnO layer with a n‐type conductivity serves as the electron‐injection and hole‐blocking layer in virtue of its matched electron affinity with CsPbBr 3 and a relatively deep valence band energy level, as well as a spacer placed between Au NPs and emissive CsPbBr 3 QDs to avoid the emission quenching.…”
Section: Resultsmentioning
confidence: 99%
“…By combining the band‐gaps from ultraviolet–visible absorption spectra and VBM data from UPS spectra, the energy levels of four functional layers were calculated and the schematic band alignment was drawn with respect to the vacuum level (Figure b) assuming that there are no imperfections at the heterointerfaces. In the present case, the ZnO NWs could be deemed as an electron‐providing layer and a transparent photon guider . The thin MgZnO layer with a n‐type conductivity serves as the electron‐injection and hole‐blocking layer in virtue of its matched electron affinity with CsPbBr 3 and a relatively deep valence band energy level, as well as a spacer placed between Au NPs and emissive CsPbBr 3 QDs to avoid the emission quenching.…”
Section: Resultsmentioning
confidence: 99%
“…Semiconducting materials in group II–VI and III–V generally possess WZ or ZB structure and are well known for their excellent optical and electronic properties [ 60 , 61 ]. They have been widely utilized for the applications of electronic and optoelectronic devices and their piezoelectric properties have been recently investigated.…”
Section: 1d Piezoelectric Materialsmentioning
confidence: 99%
“…Wurtzite is the most thermodynamically stable form of zinc oxide at ambient conditions. The materials exist unique optical and electrical properties in their nanoscale order and these are becoming responsible for potential applications in the field of solar cell (Saboor et al 2019), laser diode (Deng et al 2020), photocatalysis (Das et al 2018), light emitting device (Lu et al 2017).Zinc Oxide is considered to be one of the attractive semiconductors in the field of photocatalysis for the mineralization of organic dye in water as compared to TiO2 (Shinde et al 2017,Li et al 2009). The high quantum efficiency and the capability to absorb large faction of the solar spectrum are the discernible reasons which lead ZnO to become more novel material for wastewater treatment.…”
Section: Introductionmentioning
confidence: 99%