ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Bature, U. I.; Khir, M. H. Md; Nawi, I. Md; Zakariya, M. A.; Zahoor, Furqan

doi:10.1109/access.2021.3098061

Cited by 44 publications

(22 citation statements)

References 332 publications

(448 reference statements)

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“…In RRAM using ZnO, oxygen ions were involved in forming conductive filaments in ZnO combined with the top electrode during the set/reset operation, and the endurance property was degraded [ 5 , 23 , 24 ]. In order to prevent this degradation, a SiCN thin film (4MS PPR of 5%) was suggested for the first time to block the oxygen ions from combining with the top electrode and served as temporary oxygen storage between the top electrode and ZnO [ 12 , 13 , 14 , 15 ].…”

Section: Resultsmentioning

confidence: 99%

Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications

Song

Kim³

et al. 2022

Nanomaterials

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In this study, a silicon carbon nitride (SiCN) thin film was grown with a thickness of 5~70 nm by the plasma-enhanced chemical vapor deposition (PECVD) method, and the oxygen permeation characteristics were analyzed according to the partial pressure ratio (PPR) of tetramethylsilane (4MS) to the total gas amount during the film deposition. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), and X-ray reflectivity (XRR) were used to investigate the composition and bonding structures of the SiCN film. An atomic force microscope (AFM) was used to examine the surface morphology of the SiCN films to see the porosity. The analysis indicated that Si–N bonds were dominant in the SiCN films, and a higher carbon concentration made the film more porous. To evaluate the oxygen permeation, a highly accelerated temperature and humidity stress test (HAST) evaluation was performed. The films grown at a high 4MS PPR were more susceptible to oxygen penetration, which changed Si–N bonds to Si–N–O bonds during the HAST. These results indicate that increasing the 4MS PPR made the SiCN film more porous and containable for oxygen. As an application, for the first time, SiCN dielectric film is suggested to be applied to resistive random access memory (RRAM) as an oxygen reservoir to store oxygen and prevent a reaction between metal electrodes and oxygen. The endurance characteristics of RRAM are found to be enhanced by applying the SiCN.

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Section: Resultsmentioning

confidence: 99%

Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications

Song

Kim³

et al. 2022

Nanomaterials

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“…ZnO and Zn 2 SnO 4 (ZSO) are two prominently studied metal oxide semiconductors with wide optical bandgap of 3.3 and 3.88 eV, respectively, and have great potential for visible light sensors because of their fascinating optical properties and strong absorption in ultraviolet (UV) region. [ 19–21 ]…”

Section: Introductionmentioning

confidence: 99%

Fully Photon Controlled Synaptic Memristor for Neuro‐Inspired Computing

Shrivastava

Keong

Pratik

et al. 2023

Adv Elect Materials

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The emerging optoelectronic memristive synapses having the advantages of both optics and electronics exhibit a great potential in neuro‐inspired computing, which is a new generation of artificial intelligence. Herein, a light stimulated synaptic memristor (LSSM) based on ZnO/Zn2SnO4 heterostructure is prepared with the characteristics of reversibly tunable conductance states by varying the wavelength of the incident light. The synaptic feature of this fully photon controlled memristive synapse is revealed by potentiation and depression behaviors stimulated by violet and red light pulses, respectively. Similar to biological brain, the device demonstrates the dynamic learning and forgetting behavior. All‐optically driven and bio‐vision inspired image processing function such as contrast enhancement is exemplified. The international Morse code for Arabic numerals (0–9) is also successfully conveyed by patterned light pulses and suggests the device's potential in the field of optical wireless communication for human–machine interface. Classical Pavlovian conditioning (associative learning) is successfully demonstrated through visible light induction. Finally, the device can realize the recognition application of Zalando's article image through the simulation based on Hopfield neural network (HNN). This work provides a promising approach toward optoelectronic neural systems and human–machine interaction technologies.

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“…Among all the material candidates, zinc oxide (ZnO) is a suitable material which has both required properties . Indeed, ZnO-based RSM has been studied quite intensively with different morphologies, including polycrystalline, nanorod, and amorphous . Moreover, the ultraviolet luminescence from ZnO, which has a wide direct band gap of about 3.37 eV and an exciton binding energy of about 60 meV at room temperature, has also been widely investigated. − Accordingly, our intended new type of light-emitting RSM can be established with ZnO as the active layer.…”

Section: Introductionmentioning

confidence: 99%

Optically and Electrically Controllable Light-Emitting Nonvolatile Resistive Switching Memory

Lin

Chen

2023

ACS Appl. Electron. Mater.

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Resistive switching memory (RSM) emerges as a decisive player for the future development of semiconductor industry due to its many advantages, such as high speed, cost effectiveness, excellent scalability, and compatibility with current technology. However, the electrical reading of the RSM array is usually in series sequence, which limits its maximum data storage density and processing speed. This drawback can be overcome by optically readable memory devices. Herein, we demonstrate an unprecedented optically and electrically controllable light-emitting RSM. This device uses a tandem structure which is composed of a light-emitting RSM and a perovskite solar cell. The state of the device can be encoded both electrically and optically, with highresistive state and low-resistive state. Interestingly, the device exhibits electroluminescence in the low-resistive state, which provides the capability for reading the encoded signal optically. By integrating with a solar cell, the whole device enables to assist on the lightemitting RSM to achieve the unique feature of optical writing. Compared with conventional memory, our designed device with multiple functionalities of optical/electrical encoding and electrical/optical reading should be very useful and timely for the development of next-generation information technology.

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ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Cited by 44 publications

References 332 publications

Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications

Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications

Fully Photon Controlled Synaptic Memristor for Neuro‐Inspired Computing

Optically and Electrically Controllable Light-Emitting Nonvolatile Resistive Switching Memory

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