ZnO:Ca MSM ultraviolet photodetectors

Hunashimarad, Basavaraj G.; Bhat, J. S.; Raghavendra, P. V.; Bhajantri, R. F.

doi:10.1016/j.optmat.2021.111960

Cited by 18 publications

(1 citation statement)

References 66 publications

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“…26 In this paper, we propose a homogeneous monolithic integration of UVPT with a bipolar junction transistor (BJT) structure and μLED, where the UVPT has the same GaN material and process fabrication system as an LED. Compared with the photodetectors, MSM 27 and APD, 28 the UVPT with the BJT structure has some advantages of a lower operating bias voltage without avalanche noise, high responsiveness, large current gain and relatively simple fabrication process. 29 In the UVPT-μLED, only two additional doped GaN layers are required because the cathode of the μLED and the collector of UVPT share the same n-GaN.…”

Section: Introductionmentioning

confidence: 99%

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Su,

Wang,

Zou

et al. 2024

ACS Photonics

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A vertical integration of indium gallium nitride/ gallium nitride (InGaN/GaN)-based microlight-emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor (UVPT), based on the same GaN material and process platform (UVPT-μLED), was proposed. The integrated device is a novel integrated device with light-emitting, detecting, sensing, driving and regulating functions. It can be used as a receiver and transmitter. The light-emission effect of the μLED on UVPT can be regulated by changing the power of an external light. Optical-electrical-optical conversion was conducted with Silvaco TCAD software. Electro-optic modulation characteristics and optical power amplification were attained through a Silvaco TCAD simulation. By optimization of the size and concentration of the device epitaxial, the current gain of the optimized device reaches a maximum of 240. The UVPT-μLED device shows a strong response to small-power light and a stable response to high-power light. The UVPT-μLED chip with a high switching ratio was successfully prepared and used to verify the feasibility of the UVPT-μLED device. The proposed monolithic integrated device not only can be used for traditional displays but also shows great potential in intelligent displays, such as human−computer interactive systems, on-chip optical interconnects, photonic chips and visible-light communications.

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Section: Introductionmentioning

confidence: 99%

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Su,

Wang,

Zou

et al. 2024

ACS Photonics

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Improved Perovskite CH₃NH₃PbI₃ Thin Films by ZIF‐67 Additive Assisted Co Ion Doping toward High‐Performance and Stable Photodetectors

Cheng

Zhao

Chen

et al. 2023

Advanced Optical Materials

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Lead halide perovskites are considered important materials for the fabrication of high‐performance optoelectronic devices. However, the poor quality of thin films with abundant grain boundaries and defect states greatly lower the performance and stability of as‐fabricated devices. In the present work, the growth of improved perovskite CH3NH3PbI3 thin films through Co‐based zeolite imidazole framework (ZIF‐67) additive assisted Co ion doping is reported. Investigation of the morphological, structural, optical, and electrical properties shows that the Co ion doped CH3NH3PbI3 (CH3NH3Pb0.98Co0.02I3) thin films exhibit low grain boundaries, low defect states, and improved structural stabilities. The positive roles of suppression of defect states are further demonstrated by improved performance and stability of photodetectors based on CH3NH3Pb0.98Co0.02I3 thin films. Finally, density functional theory calculations are performed to reveal the mechanisms of passivation of undercoordinate Pb2+ vacancy defect states by Co ion doping. The results provided in this work will pave the way toward the fabrication of high performance and stable perovskite photodetectors in the future.

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Ultraviolet photodetectors based on wide bandgap semiconductor: a review

Ding,

Zhao,

Chen

et al. 2024

Appl. Phys. A

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ZnO:Ca MSM ultraviolet photodetectors

Cited by 18 publications

References 66 publications

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Improved Perovskite CH₃NH₃PbI₃ Thin Films by ZIF‐67 Additive Assisted Co Ion Doping toward High‐Performance and Stable Photodetectors

Ultraviolet photodetectors based on wide bandgap semiconductor: a review

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ZnO:Ca MSM ultraviolet photodetectors

Cited by 18 publications

References 66 publications

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Improved Perovskite CH3NH3PbI3 Thin Films by ZIF‐67 Additive Assisted Co Ion Doping toward High‐Performance and Stable Photodetectors

Ultraviolet photodetectors based on wide bandgap semiconductor: a review

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Improved Perovskite CH₃NH₃PbI₃ Thin Films by ZIF‐67 Additive Assisted Co Ion Doping toward High‐Performance and Stable Photodetectors