ZnO growth by chemically assisted sublimation

Ntep, J; Barbé, M.; Cohen‐Solal, G.; Bailly, Francis; Lusson, A.; Triboulet, R.

doi:10.1016/s0022-0248(98)80214-5

Cited by 20 publications

(15 citation statements)

References 9 publications

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“…will be effective (DG$À40 kcal) and the water generated by (18) will act on reaction (19) decreasing the O 2 consumption and limiting offstoichiometric effects. This new approach allows summarising that the growth of ZnO by vapour transport is possible if partial pressures higher than the equilibrium ones are generated.…”

Section: Experimental Workmentioning

confidence: 99%

“…The literature on the growth of ZnO by vapour transport is significant [8][9][10][11][12][13][14][15][16]. Focusing on more recent papers, Triboulet's group has grown good ZnO single crystals $1 cm 3 using chlorine, carbon [8], hydrocarbides [15] and water [19] in the process as growth ''activators''. Some authors have observed as well an increase of the growth rate when residual water was not removed [12].…”

Section: Introductionmentioning

confidence: 99%

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Study of the ZnO crystal growth by vapour transport methods

Tena‐Zaera

Martinez-Tomas

Hassani

et al. 2004

Journal of Crystal Growth

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Section: Experimental Workmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of the ZnO crystal growth by vapour transport methods

Tena‐Zaera

Martinez-Tomas

Hassani

et al. 2004

Journal of Crystal Growth

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“…It has been well established that the growth of ZnO by vapour transport in closed ampoules at moderate temperatures (∼1000°C) and temperature gradients results in very low growth rates in absence of other species [11,12]. We refer them as "additional species" and we can find a good variety in literature: F 2 [13], Cl 2 [5,6,13,14], Br 2 [13,14], I 2 [13], HF [13], HCl [5,[13][14][15], HBr [14,15], HI [15], NH 3 [5], NH 4 Cl [14,15], NH 4 Br [14,15], ZnCl 2 [15,16], HgCl 2 [5,17,19], Zn [16,18], H 2 [5,20,21], C [6,21,23] and different mixtures: H 2 O+H 2 [2,20], H 2 +C+H 2 O [24] and N 2 +C+H 2 O [24].…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnO crystals by vapour transport: Some ways to act on physical properties

Tena‐Zaera

Martı́nez-Tomás

Gómez‐García

et al. 2006

Cryst. Res. Technol.

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Nowadays, the growth of ZnO by vapor transport in silica ampoules is generally made in presence of graphite. As it has been already shown, this means that the growth process is carried out in presence of a Zn excess. In order to control that and act, as a consequence, on the physical properties of crystals we have performed a systematic study of the growth process in a wide range of Zn excess compositions using well defined experimental conditions. As a preliminary characterization, optical absorption and electrical properties have been analyzed at room temperature. The results show how some physical properties of asgrown ZnO crystals can be changed in a controlled way by an adequate combination of different growth conditions such as graphite covering of inner ampoule walls, thermal difference between source material and crystallization zone and additional gas (composition and pressure). In this frame some post-growth annealing processes can be avoided reducing the time and cost of processes.

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“…It is also not possible to use physical vapour transport method, because the vapour pressure of ZnO is very low (in the temperature range 900-1200 • C). Useful methods of ZnO growth are based on chemical transport [1][2][3][4][5][6][7][8]. In spite of a progress in the technology of…”

Section: Introductionmentioning

confidence: 99%