ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect

Abstract

A zinc oxide nanowire (ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.

Low Leakage Current ZnO Nanowire Schottky Photodiodes Built by Dielectrophoretic Contact

“…At 1 V reverse bias, the dark current is 2.5 pA, a value significantly lower than those found in previous works [5], [6]. In addition, the device exhibits a current as low as 40 pA at 40 V (Fig.…”

“…Operated in photoconductive mode, the devices present shorter recovery times than photoconductors. Effective rectifiying behaviors have been obtained from Schottky barrier contacts fabricated from the deposition of a ZnO NW onto a metal electrode pre-patterned on a substrate [5], [6]. In those devices, the reduction of the potential barrier is a key factor in the device performance.…”

Ultrahigh-gain single SnO2 nanowire photodetectors made with ferromagnetic nickel electrodes

“…10,11 Recently, tin dioxide (SnO 2 ) with a wide direct band gap of 3.6 eV and high quantum efficiency in the ultraviolet region has attracted a great deal of attention, and there are potential applications in many practical devices, such as visible-blind photodetectors and solar cells. [12][13][14][15] In addition, because NWs have a high surface-to-volume ratio, the surface of NWs can influence the conductivity markedly. Owing to charged defects located at SnO 2 NWs surface, the upward bandbending forms a low-conductivity depletion layer.…”

Ultraviolet photodetectors based on ZnO nanorods-seed layer effect and metal oxide modifying layer effect

“…The Schottky barrier plays an important role in improving the performance of the PDs, and many researchers have investigated the Schottky contact between ZnO NRs and metal [11-15], but investigations on effects of metal oxide coating and seed layer on ZnO NW Schottky PDs using post-deposition thermal annealing treatment are scarce. In this study, to investigate the effect of the seed layer and oxide material on the performance of PDs, a simple route to gain Schottky barrier by deposition of Pt electrodes on the top of different oxide material-coated n -ZnO NRs, which are prepared by hydrothermal process on different seed layers is introduced.…”