ZnO nanowire photodetectors based on Schottky contact with surface passivation

Zhang, Dakuan; Sheng, Yinghong; Wang, Yunlong; Gao, Fan; Yan, Shancheng; Wang, Junzhuan; Pan, Lijia; Wan, Qing; Shi, Yi

doi:10.1016/j.optcom.2015.07.007

Cited by 12 publications

(5 citation statements)

References 22 publications

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“…Oxygen incorporation in the growth process is essential to reduce deep-level traps, and therefore the photogenerated electrons and holes undergo a rapid separation and combination process, promoting a fast response recovery. To improve the photodetector performance, some further strategies are required, including improving the carrier mobility to reduce the carrier transit time, [1] reducing the deeplevel trapping of minority carriers to suppress the persistentphotoconductivity effect, [27] surface passivation to reduce surface recombination, [28] or inducing additional built-in field by using novel designs of heterostructure [5,29] or three-terminal phototransistors. [30]…”

Section: -4mentioning

confidence: 99%

Transition of photoconductive and photovoltaic operation modes in amorphous Ga ₂ O ₃ -based solar-blind detectors tuned by oxygen vacancies

Zhang

Chen

et al. 2019

Chinese Phys. B

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We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga 2 O 3 -based solar-blind photodetectors in metal-semiconductor-metal (MSM) configurations. The conversion from Ohmic to Schottky contacts at Ti/Ga 2 O 3 interface is realized by tuning the conductivity of amorphous Ga 2 O 3 films with delicate control of oxygen flux in the sputtering process. The abundant donor-like oxygen vacancies distributed near the Ti/Ga 2 O 3 interface fascinate the tunneling process across the barrier and result in the formation of Ohmic contacts. As a consequence, the serious sub-gap absorption and persistent photoconductivity (PPC) effect degrades the performance of the photoconductive detectors. In contrast, the photovoltaic device with a Schottky contact exhibits an ultra-low dark current less than 1 pA, a high detectivity of 9.82×10 12 cm•Hz 1/2 •W −1 , a fast response time of 243.9 µs, and a high ultraviolet C (UVC)-toultraviolet A (UVA) rejection ratio of 10 3 . The promoting performance is attributed primarily to the reduction of the subgap states and the resultant suppression of PPC effect. With simple architecture, low fabrication cost, and easy fusion with modern high-speed integrated circuitry, these results provide a cost-effective way to realize high performance solar-blind photodetectors towards versatile practical applications.

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Section: -4mentioning

confidence: 99%

Transition of photoconductive and photovoltaic operation modes in amorphous Ga ₂ O ₃ -based solar-blind detectors tuned by oxygen vacancies

Zhang

Chen

et al. 2019

Chinese Phys. B

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“…The slow response could be attributed to the presence of surface defects in ZnO NWs. Passivation techniques could be explored in future to have a faster photo response from the PD device 49,50 . The sensitivity of the PD is the measure of the ratio between the photo response current to the dark current.…”

Section: Resultsmentioning

confidence: 99%

ZnO nanowires based degradable high-performance photodetectors for eco-friendly green electronics

Yalagala¹,

Dahiya²,

Dahiya³

2023

OEA

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Disposable devices designed for single and/or multiple reliable measurements over a short duration have attracted considerable interest recently. However, these devices often use non-recyclable and non-biodegradable materials and wasteful fabrication methods. Herein, we present ZnO nanowires (NWs) based degradable high-performance UV photodetectors (PDs) on flexible chitosan substrate. Systematic investigations reveal the presented device exhibits excellent photo response, including high responsivity (55 A/W), superior specific detectivity (4x10 14 jones), and the highest gain (8.5x10 10 ) among the reported state of the art biodegradable PDs. Further, the presented PDs display excellent mechanical flexibility under wide range of bending conditions and thermal stability in the measured temperature range (5-50 °C). The biodegradability studies performed on the device, in both deionized (DI) water (pH≈6) and PBS solution (pH=7.4), show fast degradability in DI water (20 mins) as compared to PBS (48 h). These results show the potential the presented approach holds for green and cost-effective fabrication of wearable, and disposable sensing systems with reduced adverse environmental impact.

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“…To circumvent the influence of surface states on the performance of Schottky barrier-based UV photodetectors, surface and interface engineering techniques have been widely used. Surface passivation [107], [108] and Au nanoparticles decoration [38] have been used to improve the performance of Schottky barrier-based UV photodetectors. Yang et al developed a novel method, which was called the sruface-ionic-gate (SIG) modulation technique, to modulate the surface states and the Schottky barrier height to improve the performance of ZnO NWs-based Schottky barrier photodetectors [109].…”

Section: A Conversional Zno Nws/nrs-based Ultraviolet Photodetectorsmentioning

confidence: 99%

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

Xiu-sheng

Liu

et al. 2021

IEEE Access

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Ultraviolet photodetectors have attracted significant research attention in recent years due to their potential applications in civilian and military fields. ZnO nanowires and nanorods have been regarded as the most potential candidates for ultraviolet photodetectors fabrication because of their peculiar characteristics and size effect, which are different from their bulk material. Recently, many novel routes and semiconductor features, such as the surface and interface engineering, the pryo-phototronic effect, the piezo-phototronic effect, the surface plasmon effect and the surface functionalization have been utilized to improve the photoelectric characteristics of ultraviolet photodetectors. Thus, the working mechanism of these effects existing in ZnO nanowires/nanorods-based ultraviolet photodetectors should be investigated in-depth. In this paper, firstly, the hydrothermal method and the chemical vapor deposition method, as two typical synthesis methods of ZnO nanowires are briefly reviewed. Secondly, we focus on reviewing the properties of varied ZnO nanowires/nanorods-based ultraviolet photodetectors constructed using the above mentioned semiconductor features with metal-semiconductor-metal structure, Schottky barrier structure, vertical p-n heterojunction structure and core-shell heterostructure. Furthermore, the most attractive self-powered ultraviolet photodetectors are systematically reviewed. For various ZnO nanowires/nanorods-based ultraviolet photodetectors, we put the emphasis on the working mechanism of semiconductor features to improve the properties of the photodetectors. Finally, we give an outlook on the future development of ZnO nanowires/nanorods-based ultraviolet photodetectors.

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ZnO nanowire photodetectors based on Schottky contact with surface passivation

Cited by 12 publications

References 22 publications

Transition of photoconductive and photovoltaic operation modes in amorphous Ga ₂ O ₃ -based solar-blind detectors tuned by oxygen vacancies

Transition of photoconductive and photovoltaic operation modes in amorphous Ga ₂ O ₃ -based solar-blind detectors tuned by oxygen vacancies

ZnO nanowires based degradable high-performance photodetectors for eco-friendly green electronics

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

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ZnO nanowire photodetectors based on Schottky contact with surface passivation

Cited by 12 publications

References 22 publications

Transition of photoconductive and photovoltaic operation modes in amorphous Ga 2 O 3 -based solar-blind detectors tuned by oxygen vacancies

Transition of photoconductive and photovoltaic operation modes in amorphous Ga 2 O 3 -based solar-blind detectors tuned by oxygen vacancies

ZnO nanowires based degradable high-performance photodetectors for eco-friendly green electronics

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

Contact Info

Product

Resources

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Transition of photoconductive and photovoltaic operation modes in amorphous Ga ₂ O ₃ -based solar-blind detectors tuned by oxygen vacancies

Transition of photoconductive and photovoltaic operation modes in amorphous Ga ₂ O ₃ -based solar-blind detectors tuned by oxygen vacancies