2005
DOI: 10.1016/j.spmi.2005.07.003
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ZnO rediscovered — once again!?

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Cited by 105 publications
(65 citation statements)
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“…[11,12] The dependence of the absorption edge on the crystal size in ZnO nanocrystals has been investigated by Meulenkamp and an empirical formula for ZnO nanocrystals has been obtained. [3] Applying the formula we obtained 3.29 nm for the average diameter and this value is in good agreement with the X-ray diffraction result.…”
Section: Methodsmentioning
confidence: 99%
“…[11,12] The dependence of the absorption edge on the crystal size in ZnO nanocrystals has been investigated by Meulenkamp and an empirical formula for ZnO nanocrystals has been obtained. [3] Applying the formula we obtained 3.29 nm for the average diameter and this value is in good agreement with the X-ray diffraction result.…”
Section: Methodsmentioning
confidence: 99%
“…Zinc oxide (ZnO) is a wide-bandgap semiconductor that is being extensively investigated for the development of optoelectronic devices operating in the blue-to-near-UV spectral region [1,2]. In addition to its large bandgap energy (~3.3 eV), ZnO possesses a large exciton binding energy (~60 meV) [2,3] and can easily be handled to yield uniform and high-quality ZnO nanostructures without the use of highly toxic precursors [4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…The cooled sample was then washed with a small amount of distilled water (~20 cm 3 ) and filtered under vacuum to remove any surface Zn(NO 3 ) 2 .6H 2 O not absorbed by the zeolite. Oxidised samples are hereafter denoted FER/ZnO-M Wet impregnation was carried out by adding a known amount of FER to an aqueous solution of Zn(NO 3 ) 2 and stirring for several hours with gentle heating until the solvent evaporated. In using this method a precise Zn loading of the zeolite was achieved.…”
Section: Methodsmentioning
confidence: 99%
“…Over the past decade there has been intensive research into the growth and synthesis of nanostructured, semiconducting materials, such as quantum dots, wires and nanorods, with the promise of altered and improved optical properties as a result of quantum confinement effects. [1] ZnO; a wide direct band-gap II-VI semiconductor with a bulk band gap of 3.37 eV at 298 K and a relatively high exciton binding energy of 60 meV [2] that allows significant exciton emission at room temperature, has been studied in this work. Previous attempts at nanoscale production of ZnO particles have utilized methods such as colloidal precipitation [3] and metal organic chemical vapour deposition (MOCVD) [4] , which can lead to aggregation of ZnO particles.…”
Section: Introductionmentioning
confidence: 99%