ZnO Schottky ultraviolet photodetectors

Liang, Songmiao; Sheng, H.; Liu, Y.; Huo, Zhi-Ying; Lu, Yicheng; Shen, H.

doi:10.1016/s0022-0248(01)00830-2

Cited by 892 publications

(463 citation statements)

References 8 publications

Supporting

Mentioning

446

Contrasting

Unclassified

Order By: Relevance

“…As derived from these formulae, φ B for the ZnO:N-based diode is about 0.7 eV. A similar value of φ B has been reported for the Schottky junctions on bulk ZnO [13,28]. water (see Fig.…”

Section: Resultssupporting

confidence: 82%

“…pentacene [24]. Moreover, the low thermal budget re- In the present work we test the traditional architecture (with the top Schottky contact) for the sensing applications of ZnO-based structures [27,28]. We rst tested the applicability of ZnO lms doped (compensated) with nitrogen applying the NH 4 OH precursor.…”

Section: Resultsmentioning

confidence: 99%

“…We rst tested the applicability of ZnO lms doped (compensated) with nitrogen applying the NH 4 OH precursor. Nitrogen acts as a p-type dopant in ZnO (with high ionization energy of about 1.3 eV [29]), e ectively compensating the free electron concentration [28]. Figure 1 shows that nitrogen is built-in uniformly into the host material.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

et al. 2011

View full text Add to dashboard Cite

The ZnO-based Schottky diodes revealing a high recti cation ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high recti cation ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The in uence of these approaches on the diode's recti cation ratio together with modeling based on the di erential approach and thermionic emission theory are presented.

show abstract

“…As derived from these formulae, φ B for the ZnO:N-based diode is about 0.7 eV. A similar value of φ B has been reported for the Schottky junctions on bulk ZnO [13,28]. water (see Fig.…”

Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

et al. 2011

View full text Add to dashboard Cite

show abstract

“…The ZnO nanostructures are one of the most promising materials for the chemical and biosensors due to having exotic and versatile properties counting biocompatibility, nontoxicity, photochemical stability, high specific surface area, optical transparency, electrochemical activities, high electron communicating [3]- [5]. On the other hand, ZnO is form a different nanostructures morphology such as nanowires, nanoribbons/nanobelts, nanocastle, nanospheres, nanocages, nanofibers etc [6]- [8]. The above mentioned various types of nanostructures have been synthesized and extensive works have been dedicated to the development of more nanoscale structures.…”

Section: Introductionmentioning

confidence: 99%

Hydrothermally Synthesis Nanostructure ZnO Thin Film for Photocatalysis Application

Shinde¹,

Nam²,

Patil³

et al. 2016

KEPCO Journal on Electric Power and Energy

View full text Add to dashboard Cite

ZnO has nanostructured material because of unique properties suitable for various applications. Amongst all chemical and physics methods of synthesis of ZnO nanostructure, the hydrothermal method is attractive for its simplicity and environment friendly condition. Nanostructure ZnO thin films have been successfully synthesized on fluorine doped tin oxide (FTO) substrate using hydrothermal method. A possible growth mechanism of the various nanostructures ZnO is discussed in schematics. The prepared materials were characterized by standard analytical techniques, i.e., X-ray diffraction (XRD) and Field-emission scanning electron microscopy (SEM). The XRD study showed that the obtained ZnO nanostructure thin films are in crystalline nature with hexagonal wurtzite phase. The SEM image shows substrate surface covered with nanostructure ZnO nanrod. The UV-vis absorption spectrum of the synthesized nanostructure ZnO shows a strong excitonic absorption band at 365 nm which indicate formation nanostructure ZnO thin film. Photoluminescence spectra illustrated two emission peaks, with the first one at 424 nm due to the band edge emission of ZnO and the second broad peak centered around 500 nm possibly due to oxygen vacancies in nanostructure ZnO. The Raman measurements peaks observed at 325 cm -1 , 418 cm -1 , 518 cm -1 and 584 cm -1 indicated that nanostrusture ZnO thin film is high crystalline quality. We trust that nanostructure ZnO material can be effectively will be used as a highly active and stable phtocatalysis application.

show abstract

“…Among of them, ZnO has attracted increasing interest for its particular properties such as a wide band gap of $ 3.37 eV, large exciton binding energy of $60 meV, high radiation endurability, low cost, and environmental inertness, thus emerging as one of the excellent material for next generation UV PD [10,11]. ZnO-based UV PDs is fabricated from single crystals, thin films and nanostructures in the recent past [12][13][14][15]. Performance enhancement is still one of the major issues of ZnO-based UV PDs, and continuing efforts are committed in this direction.…”

Section: Introductionmentioning

confidence: 99%

Metal–semiconductor–metal UV photodetector based on Ga doped ZnO/graphene interface

Kumar

Noh

Polat

et al. 2015

Solid State Communications

View full text Add to dashboard Cite

a b s t r a c tFabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-todark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.

show abstract

ZnO Schottky ultraviolet photodetectors

Cited by 892 publications

References 8 publications

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

Hydrothermally Synthesis Nanostructure ZnO Thin Film for Photocatalysis Application

Metal–semiconductor–metal UV photodetector based on Ga doped ZnO/graphene interface

Contact Info

Product

Resources

About