The nanosized ZnO structures were grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) at the temperature range 200 -500 °C at variable precursor pressure. The temperature induced evolution of the ZnO microstructure was observed, resulting in regular transformation of the material from conventional polycrystalline layers to hierarchically arranged sheaves of ZnO nanowires. The structures obtained were uniformly planarly located over the substrate and possessed as low nanowires diameter as 30 -45 nm at the tips. The observed growth evolution is explained in term of ZnO crystal planes free energy difference and growth kinetic. For comparison, the convenient growth at constant precursor pressure on Si and SiC substrates has been performed, resulted in island-type grown ZnO nanostructures. The demonstrated nanosized ZnO structures may have unique possible areas of application, which are listed here.
PACS keywordsZnO nanostructures, APMOCVD, temperature evolution
IntroductionEngineering of the crystal's morphology and microstructure has initiated great research interest. Particularly control of the shapes, size and morphology of novel or mature functional materials is of high interest, enabling manifestation of their novel properties or tailorable functions. Zinc oxide is a promising II-VI semiconductor, having wide band gap ~3.37 eV and a large exciton binding energy ~60 meV at room temperature. It has attracted increasing interest due to its potential applications in electronics [1], photonics [2], sensors [3], transistors [4], field emission displays [5], etc. It is one of the most gifted materials for the fabrication of short-wavelength optoelectronic devices including blue-UV light-emitting and room temperature UV lasing diodes [6]. ZnO possesses one of the richest family of nanostructures: various nanorods, nanopillars, nanowires, nanodonats, nanodrums, nanopropellers, nanonails, nanobridges etc. have been widely reported in literature [7]. However, such exotic morphologies of ZnO nanostructures complicate their functionality, i. e. hamper their practical applications, while the controllable growth of ordered and uniform ZnO nanostructure is highly desirable and may enable their possible applications in various devices. Particular interest represents the hierarchical ZnO nanostructures, being able to combine the high surface-to-volume ratio and fundamental material properties of ZnO, which may be essential for specific applications such as gas-and bio-sensors, hybrid solar cells, etc [8]. Recently, we have demonstrated the ability to grow well-ordered ZnO nanopillars on a seeding layer via selective homoepitaxial growth by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) [9]. Moreover, by this technique we succeeded in obtaining ZnO nanostructures of diverse morphology. Clear evolution of the