ZnON MIS Thin-Film Diodes

Abstract

Zinc oxynitride metal-insulator-semiconductor diodes are fabricated and characterized. Although these devices display excellent rectification, their temperature-dependent current-voltage characteristics are not explicable using analysis methodologies currently available in the literature. Therefore, we employ a simple curve fitting strategy in order to elucidate measured trends. It is found that the forward current trends are describable using three parameters, i.e., reverse saturation current, ideality factor, and series resistance, whereas the reverse current temperature dependence only requires one parameter, i.e., shunt resistance. All four of these model parameters are found to be strongly temperature dependent.

Metal–Semiconductor Field‐Effect Transistors Based on the Amorphous Multi‐Anion Compound ZnON

“…However, an improvement in rectification ratio was recently demonstrated for ZnON diodes comprising a very thin insulating layer between metal and semiconductor, which reduces the defect trapped charge density and with that the reverse leakage current. [ 23 ]…”

“…However, an improvement in rectification ratio was recently demonstrated for ZnON diodes comprising a very thin insulating layer between metal and semiconductor, which reduces the defect trapped charge density and with that the reverse leakage current. [23] Figure 3a shows a typical transfer characteristic of the investigated MESFET at a drain-source voltage of V DS = 2 V and the respective absolute gate current |I G |. The drain current I D can be controlled over more than five orders of magnitude from 0.6 mA for a gate voltage of V GS = 2 V to 2.6 × 10 −9 A for V GS = −2 V. It is evident that the transistors off-current is dominated by the gate leakage current, thus limiting the draincurrent on/off ratio.…”