ZnS:N and ZnS:N,Ag grown by molecular beam epitaxy

Abstract

The N-doping conditions have been investigated in the growth of ZnS:N by molecular beam epitaxy using RF plasma of N 2 gas. As a result, high growth temperatures are found to be suitable for the effective incorporation and the activation of N acceptors. The capacitance versus voltage data of the ZnS:N layers grown at around 350• C exhibit p-type behavior, while the undoped layers show an n-type characteristic due to residual donors. ZnS:N,Ag epitaxial layers were also grown to investigate the effect of Ag-co-doping. It is shown that the ptype behavior of the N-doped layers is enhanced by the Ag-co-doping. This suggests the formation of Ag-related complex centers compensating residual donors.

ZnS-Based ZnSTe:N/n-ZnS Light-Emitting Diodes

“…1) It has also been studied as a wideband-gap semiconductor (E g ¼ 3:73 eV at RT) for application to UV/visible optical devices, where the difficulty in achieving p-type conduction has been a major obstacle. So far, there have been several reports on p-type conduction in ZnS; [2][3][4][5][6] however, pn-junction light-emitting devices using these p-type layers have never been reported. The ZnS-based light-emitting devices reported to date are likely to be based on a metal-insulator-semiconductor (MIS) or ''MS'' junction.…”