ZnSe/CdTe/ZnSe heterostructures

Rubini, S.; Bonanni, B.; Pelucchi, E.; Franciosi, A.; Garulli, A.; Parisini, A.; Zhuang, Yan; Bauer, G.; Holý, V.

doi:10.1116/1.1305921

Cited by 7 publications

(3 citation statements)

References 29 publications

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“…In many studies, the interpretation is based on the mosaic block model. [6][7][8][9] Determination of the dislocation densities from peak widths [9][10][11][12] is based on different variants of the formulas proposed for the classical models in powder diffraction. [13][14][15] A direct Monte Carlo calculation of the diffraction peak profile due to parallel straight dislocations demonstrates that the peak width depends not only on the dislocation density but also on the spatial correlations in dislocation positions.…”

Section: Introductionmentioning

confidence: 99%

X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

Kopp

Kaganer

Байдакова

et al. 2014

Journal of Applied Physics

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Densities of a-and aþc-type threading dislocations for a series of GaN films grown in different modes by metalorganic vapor phase epitaxy are determined from the x-ray diffraction profiles in skew geometry. The reciprocal space maps are also studied. Theory of x-ray scattering from crystals with dislocations is extended in order to take into account contribution from both threading and misfit dislocations. The broadening of the reciprocal space maps along the surface normal and the rotation of the intensity distribution ellipse is attributed to misfit dislocations at the interface. We find that the presence of a sharp AlN/GaN interface leads to an ordering of misfit dislocations and reduces strain inhomogeneity in GaN films. V

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Section: Introductionmentioning

confidence: 99%

X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

Kopp

Kaganer

Байдакова

et al. 2014

Journal of Applied Physics

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“…It should be easier in the case of epitaxially grown structures, which offer also a feasibility of p-and n-type doping. On the other hand, strain resulting from a very large lattice mismatch [26][27][28][29][30] between CdTe (a CdTe = 0.648 nm) and ZnSe (a ZnSe = 0.567 nm) (above 14%) leads to a high spatial density of QDs combining these two compounds. This has precluded spectroscopy of individual QDs in such mixed type systems so far.…”

Section: Cd(sete)/znse Quantum Dots Produced By a Mn-assisted Epitaxi...mentioning

confidence: 99%

Effect of electron-hole separation on optical properties of individual Cd(Se,Te) quantum dots

et al. 2016

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Cd(Se,Te) Quantum Dots (QD) in ZnSe barrier typically exhibit a very high spectral density, which precludes investigation of single dot photoluminescence. We design, grow and study individual Cd(Se,Te)/ZnSe QDs of low spectral density of emission lines achieved by implementation of a Mnassisted epitaxial growth. We find an unusually large variation of exciton-biexciton energy difference (3 meV ≤ ∆EX−XX ≤ 26 meV) and of exciton radiative recombination rate in the statistics of QDs. We observe a strong correlation between the exciton-biexciton energy difference, exciton recombination rate, splitting between dark and bright exciton, and additionally the exciton fine structure splitting δ1 and Landé factor. Above results indicate that values of the δ1 and of the Landé factor in the studied QDs are dictated primarily by the electron and hole respective spatial shift and wavefunctions overlap, which vary from dot to dot due to a different degree of localization of electrons and holes in, respectively, CdSe and CdTe rich QD regions.

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“…X-ray reciprocal space maps allow for the determination of both the position and the broadening of a selected reflection in reciprocal space, and are thus often employed to study the structural properties of epitaxial group III nitride films (Holý et al, 1993;Heinke et al, 1994;Metzger et al, 1998;Chierchia et al, 2001Chierchia et al, , 2003Paduano et al, 2003;Kirste et al, 2005;Vickers et al, 2005;Kyutt et al, 2009;Barchuk et al, 2010Barchuk et al, , 2011Lazarev et al, 2013). The interpretation of these maps is frequently based on the assumption that the film constitutes a mosaic crystal (Holý et al, 1993;Rubini et al, 2000;Chierchia et al, 2001Chierchia et al, , 2003, picturing the film as consisting of finite-sized crystal blocks rigidly rotated with respect to each other. The broadening of reciprocal lattice points as observed in reciprocal space maps is interpreted in terms of the out-of-plane misorientation (the 'tilt') of the blocks with respect to each other and the average block size defining the lateral coherence length for the X-ray wavefield.…”

Section: Introductionmentioning

confidence: 99%

Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy

et al. 2014

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The reciprocal space map of a heteroepitaxial single‐crystal GaN(0001) film on 6H‐SiC(0001) is analyzed. The film contains a high density of threading dislocations which intersect the film parallel to the surface normal. The strain field associated with these dislocations is expected to broaden all reciprocal lattice points to discs perpendicular to the dislocation lines, i.e. parallel to the surface. Experimentally, however, the reflection is observed to be broadened also perpendicular to the surface and is rotated towards the surface normal. Using Monte Carlo simulations, it is shown that both of these features are a natural consequence of the presence of misfit dislocations at the film/substrate interface.

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ZnSe/CdTe/ZnSe heterostructures

Abstract: Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substrates

Cited by 7 publications

References 29 publications

X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

Effect of electron-hole separation on optical properties of individual Cd(Se,Te) quantum dots

Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy

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