ZnSe nanocrystals obtained in pores of SiO2 matrix with temperature stable green luminescence

Masalov, A. A.; Seminko, Vladyslav; Kononets, N. V.; Maksimchuk, Pavel; Bespalova, I.I.; Волошина, Людмила Іванівна; Malyukin, Yu. V.

doi:10.1016/j.jlumin.2016.09.043

Cited by 12 publications

(3 citation statements)

References 21 publications

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“…When excited into this band at 335 nm, an intense luminescence band is observed (Figure 9c) with a maximum near 400 nm. A similar luminescence band was studied in [28] for the porous SiO 2 matrix. The authors of this work showed that when the pure SiO 2 matrix was excited at 335 nm, a broad luminescence band with a maximum at 380 nm (at room temperature) was observed and suggested that the nature of this band could be due to either isolated silanol groups or OH-related centers.…”

Section: Excitation and Down-converted Luminescence Spectramentioning

confidence: 71%

UVC Up-Conversion and Vis-NIR Luminescence Examined in SrO-CaO-MgO-SiO2 Glasses Doped with Pr3+

Bezkrovna,

Lisiecki,

Macalik

et al. 2024

Materials

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The application of ultraviolet-C light in the field of surface treatment or photodynamic therapy is highly prospective. In this regard, the stable fluorescent silicate SrO-CaO-MgO-SiO2-Pr2O3 glasses able to effectively convert visible excitation on the ultraviolet praseodymium emission were fabricated and examined. An unusual wide-range visible-to-UVC up-conversion within 240–410 nm has been achieved in Pr3+-doped glasses, revealing their potential advantage in different sophisticated disinfection technologies. The integrated emission intensity was studied as a function of light excitation power to assess a mechanism attributed to UVC luminescence. Especially, it was revealed that the multicomponent silicate glass qualities and praseodymium 3PJ excited state peculiarities are favorable to obtaining useful broadband ultraviolet up-converted luminescence. The glass dispersion qualities were determined between 450–2300 nm. The impact of praseodymium concentration on Vis-NIR spectroscopic glass qualities was evaluated employing absorption spectra, emission spectra, and decay curves of luminescence associated with two involved praseodymium excited states. Especially, efficient interionic interactions can be inferred by investigating the decrease in 1D2 state experimental lifetime in the heavily doped samples. Examination of absorption spectra as a function of temperature implied that excitation at 445 nm should be quite effective up to T = 625 K. Contrary to this, temperature elevation gives rise to a moderate lowering of the visible praseodymium luminescence.

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Section: Excitation and Down-converted Luminescence Spectramentioning

confidence: 71%

UVC Up-Conversion and Vis-NIR Luminescence Examined in SrO-CaO-MgO-SiO2 Glasses Doped with Pr3+

Bezkrovna,

Lisiecki,

Macalik

et al. 2024

Materials

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“…The PL spectra (Figure ) have been deconvoluted for each sample properly. , We have calculated the value of excitation potential energy of each peaks observed at wavelengths 422, 466.75, 554.27, 671.12, 690.76, 705.44, and 757 nm as 2.95, 2.66, 2.24, 1.85, 1.80, 1.76, and 1.64 eV, respectively. The slight energy difference occurring with increasing Zr 4+ concentration was due to the presence of oxygen vacancies, formation of defects, and quantum confinements .…”

Section: Resultsmentioning

confidence: 99%

Influence of Zirconium (Zr⁴⁺) Substitution on the Crystal Structure and Optical and Dielectric Properties of Sr_0.8Mg_0.2(Sn_1–xZr_x)O₃ Ceramics

Anas,

Ali,

Khan

et al. 2023

ACS Omega

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In this work, new compositions of Sr 0.8 Mg 0.2 (Sn 1−x Zr x )O 3 0.00 ≤ x ≤ 0.06 ceramics are designed and synthesized by the conventional solid-state route. The influence of Zr doping on the phase, microstructural, optical, and dielectric properties is thoroughly investigated. The peaks (0 0 4) and (1 1 0) are observed to shift toward lower 2θ values, due to the variation of the ionic radius between Zr 4+ and Sn 4+ . X-ray diffraction patterns reveal the orthorhombic structure with the space group Pbnm. Scanning electron microscopy images reveal the presence of pores and particles with a high degree of agglomeration. The functional groups and modes of vibration are determined by Fourier transform infrared spectroscopy of the prepared metal oxide samples. The existence of green emission of all the synthesized samples around 554.91 nm is identified by photoluminescence spectroscopy. The dielectric properties of the fabricated samples are measured by using an impedance analyzer. The values of the tangent loss and relative permittivity are found to decrease with increasing frequency.

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“…In this paper, we report the preparation and characterization of ZnSe NCs synthesized in an amorphous SiO 2 film by high fluence ion implantation. Usually, ZnSe nanocrystals are synthesized in silica by chemical methods [22][23][24][25]. However, the ion beam technique is more suitable for optoelectronic applications due to its compatibility with the modern silicon technology.…”

Section: Introductionmentioning

confidence: 99%

Radiative recombination in zinc blende ZnSe nanocrystals ion-beam synthesized in silica

Пархоменко¹,

Власукова²,

Комаров³

et al. 2022

J. Phys. D: Appl. Phys.

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Zinc selenide nanocrystals (NCs) were successfully synthesized in silicon dioxide (silica grown on a silicon wafer) by high-fluence implantation of Zn+ and Se+ ions with subsequent rapid thermal annealing at 1000°C for 3 min. The high crystalline quality of the zinc blende ZnSe nanoclusters was proven by transmission electron microscopy with selected area electron diffraction and Raman spectroscopy. Low-temperature photoluminescence (PL) reveals the recombination of excitons in ZnSe, what further indicates a good crystalline quality of the synthesized nanocrystals. PL analysis shows a strong coupling of phonons and excitons. The Huang−Rhys parameter of the longitudinal optical phonon in the exciton transition S is in the range of 0.6−0.7. Despite the excellent quality of the ZnSe NCs synthesized in silica, defect states inside the NCs or at the NCs/SiO2 interface with activation energies of 0.1–0.2, 0.45 and 0.67 eV play a crucial role in radiative recombination.

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ZnSe nanocrystals obtained in pores of SiO2 matrix with temperature stable green luminescence

Cited by 12 publications

References 21 publications

UVC Up-Conversion and Vis-NIR Luminescence Examined in SrO-CaO-MgO-SiO2 Glasses Doped with Pr3+

UVC Up-Conversion and Vis-NIR Luminescence Examined in SrO-CaO-MgO-SiO2 Glasses Doped with Pr3+

Influence of Zirconium (Zr⁴⁺) Substitution on the Crystal Structure and Optical and Dielectric Properties of Sr_0.8Mg_0.2(Sn_1–xZr_x)O₃ Ceramics

Radiative recombination in zinc blende ZnSe nanocrystals ion-beam synthesized in silica

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ZnSe nanocrystals obtained in pores of SiO2 matrix with temperature stable green luminescence

Cited by 12 publications

References 21 publications

UVC Up-Conversion and Vis-NIR Luminescence Examined in SrO-CaO-MgO-SiO2 Glasses Doped with Pr3+

UVC Up-Conversion and Vis-NIR Luminescence Examined in SrO-CaO-MgO-SiO2 Glasses Doped with Pr3+

Influence of Zirconium (Zr4+) Substitution on the Crystal Structure and Optical and Dielectric Properties of Sr0.8Mg0.2(Sn1–xZrx)O3 Ceramics

Radiative recombination in zinc blende ZnSe nanocrystals ion-beam synthesized in silica

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Influence of Zirconium (Zr⁴⁺) Substitution on the Crystal Structure and Optical and Dielectric Properties of Sr_0.8Mg_0.2(Sn_1–xZr_x)O₃ Ceramics