ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications

Stable interface structures of heterovalent semiconductor superlattices: The case of (GaSb) (ZnTe)

“…Mixing lattice-matched heterovalent semiconductors AX and BY to form alloys (AX) 1−x (BY) x or superlattices (AX) n (BY) m [e.g., AX and BY are the III-V and II-VI (or group IV) compounds, respectively] have attracted much attention recently due to their great potential for novel technology applications because, unlike isovalent semiconductor alloys, their material properties can vary in a wide range as a function of composition x without significant change in the lattice parameters [1][2][3][4][5][6][7][8][9]. For example, ZnTe/GaSb double-heterostructured materials have been grown using molecular beam epitaxy (MBE) for laser diode applications [10][11][12];…”

Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe/GaSb distributed Bragg reflectors

“…11)], which is significantly higher than that of other widely used DBRs in the MWIR range, as shown in Table I. 9,10,[12][13][14] It was previously demonstrated that the ZnTe/GaSb DBRs could achieve a peak reflectivity of 99.0% centered at 2.5 lm with 480-nm-wide stopband. 10 In this paper, the growth of ZnTe/GaSb DBRs using molecular beam epitaxy (MBE) is described.…”

“…10) and other optoelectronic applications. The ZnTe and GaSb semiconductors have lattice constants very close to 6.1 Å and a lattice mismatch of only 0.13%, which potentially offers unlimited degrees of freedom for monolithically integrating the ZnTe/GaSb DBR structure with other GaSbbased materials without generating large amounts of misfit dislocations, thus ensuring the best possible materials quality.…”

“…9,10,[12][13][14] It was previously demonstrated that the ZnTe/GaSb DBRs could achieve a peak reflectivity of 99.0% centered at 2.5 lm with 480-nm-wide stopband. 10 In this paper, the growth of ZnTe/GaSb DBRs using molecular beam epitaxy (MBE) is described. Post-growth characterization using x-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy a) Electronic mail: yhzhang@asu.edu (TEM), and reflectance spectroscopy are carried out to comprehensively study the material properties of the ZnTe/GaSb DBRs.…”

Plasmon-enhanced distributed Bragg reflectors

“…Indeed, DBRs with high index contrast constituents have been the subject of several reports in different semiconductor material systems, including AlO x /GaAs [10] and air-gap/semiconductor [11]- [13], and ZnTe/GaSb in the MWIR through unconventional II-VI/III-V heteroepitaxy. [14] It is worth noting that MWIR VCSELs have also been produced in IV-VI semiconductors that benefit from the high index contrast between Pb 1−x Eu x Te and EuTe. [15], [16] While recent reports indicate renewed interest in IV-VI materials, [17]- [20] current high performance MWIR active regions generally rely on III-V materials.…”