2006
DOI: 10.1063/1.2185427
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ZnTe : O phosphor development for x-ray imaging applications

Abstract: An efficient ZnTe: O x-ray powder phosphor was prepared by a dry synthesis process using gaseous doping and etching medias. The x-ray luminescent properties were evaluated and compared to standard commercial phosphors exhibited an x-ray luminescent efficiency equivalent to 76% of Gd 2 O 2 S : Tb and an equal resolution of 2.5 lines/ mm. In addition, the fast decay time, low afterglow, and superior spectral match to conventional charge-coupled devices-indicate that ZnTe: O is a very promising phosphor candidate… Show more

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Cited by 28 publications
(17 citation statements)
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“…Due to its optimum energy gap (2.25 eV) [1] and low affinity (3.53 eV) [2], ZnTe is one of the most attractive semiconductors which is useful for various optoelectronic devices [3][4][5], such as green light-emitting diodes, electrooptic field detectors, photoelectrochemical solar cells, and high efficient powder-phosphor screens [6]. To the present, ZnTe nanostructures have been prepared by different techniques, such as thermal evaporation [7], hot-wall evaporation [8], radio-frequency sputtering [9], molecular beam epitaxy [10], solvothermal process [11,12] and electrodeposition [13].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Due to its optimum energy gap (2.25 eV) [1] and low affinity (3.53 eV) [2], ZnTe is one of the most attractive semiconductors which is useful for various optoelectronic devices [3][4][5], such as green light-emitting diodes, electrooptic field detectors, photoelectrochemical solar cells, and high efficient powder-phosphor screens [6]. To the present, ZnTe nanostructures have been prepared by different techniques, such as thermal evaporation [7], hot-wall evaporation [8], radio-frequency sputtering [9], molecular beam epitaxy [10], solvothermal process [11,12] and electrodeposition [13].…”
Section: Introductionmentioning
confidence: 99%
“…Most of them are composed of nanofilms, monocrystals, and more recently 1D nanocrystalline structures are available. Moreover, ZnTe has been proposed as potential host candidates for X-ray phosphor screen with highly superior properties than the widely used conventional materials, such as Gd 2 O 2 S 2 , CsI and ZnS [6].…”
Section: Introductionmentioning
confidence: 99%
“…However, thermodynamically profitable conditions of SA when all or almost all highly mismatched impurity atoms are in uniform clusters should be studied. It is well known that oxygen atoms form the exciton traps in ZnTe and ZnTe-rich alloys improving their luminescent properties [5][6][7]9]. The significant change of the luminescent properties of ZnTe co-doped with Mg and oxygen after SA is expected.…”
Section: Introductionmentioning
confidence: 96%
“…II-VI semiconductors doped with highly mismatched isoelectronic impurities has long been studied [5][6][7][8][9]. As it was recognized luminescent properties of such materials depend strongly on the various isoelectronic traps: single impurity, pairs and clusters.…”
Section: Introductionmentioning
confidence: 99%
“…Phosphor technology has been used with great success for many years to manipulate the color spectrum for lighting and display applications from various excitation sources such as X-rays, vacuum UV, or near-UV/blue radiation from a light emitting diode or laser [1], [2], [3]. Various types of nano-phosphors and quantum dots have also been recently introduced and are currently in use in applications that range from lighting to imaging/displays and detection [4], [5], [6], [7].…”
Section: Introductionmentioning
confidence: 99%