“…Due to its optimum energy gap (2.25 eV) [1] and low affinity (3.53 eV) [2], ZnTe is one of the most attractive semiconductors which is useful for various optoelectronic devices [3][4][5], such as green light-emitting diodes, electrooptic field detectors, photoelectrochemical solar cells, and high efficient powder-phosphor screens [6]. To the present, ZnTe nanostructures have been prepared by different techniques, such as thermal evaporation [7], hot-wall evaporation [8], radio-frequency sputtering [9], molecular beam epitaxy [10], solvothermal process [11,12] and electrodeposition [13].…”