ZnTe precipitates formed in SiO2 by sequential implantation of Zn+ and Te+ ions

Chemam, R.; Grob, Jean‐Jacques; Bouabellou, A.; Müller, D.

doi:10.1016/j.cattod.2005.11.085

Cited by 2 publications

(4 citation statements)

References 23 publications

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“…The high-resolution images of these clusters (figure 1) show that they are monocrystalline (or sometimes polycrystalline). The chemical and morphological aspects and the crystalline structure of ZnTe nanoparticles embedded in SiO 2 have been described elsewhere by our group (see [28][29][30]) by using different techniques such as RBS, x-ray diffraction (XRD), TEM and high-resolution TEM. In these references, it is shown that annealing treatments (from 700 to 1100 • C) of moderate-dose-implanted samples (5 × 10 15 , 1 × 10 16 and 2.9 × 10 16 ions cm −2 ) result in the formation of only single-crystalline ZnTe precipitates (mainly cubic phase).…”

Section: Samplesmentioning

confidence: 99%

“…Grobhans et al [27] have described the applications of the combinatorial ion beam technique on the synthesis of optically active ZnTe-nc buried in a SiO 2 surface. Chemam et al [28][29][30] have given a first approach to determine the optimum ion implantation conditions (doses, temperature during implantation and annealing temperature) to control the size and/or location of ZnTe-nc formed by the successive implantation of Zn and Te in a thermally grown SiO 2 on silicon.…”

Section: Introductionmentioning

confidence: 99%

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Dielectric function of ZnTe nanocrystals by spectroscopic ellipsometry

Ahmed

Naciri

Grob³

et al. 2009

Nanotechnology

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We have studied the optical properties of ZnTe nanocrystals (ZnTe-nc) by spectroscopic ellipsometry. The ZnTe-nc are embedded in a SiO2 matrix by an ion implantation technique. Two doses of 1 x 10(16) and 5 x 10(15) cm(-2) of tellurium and zinc ions are implanted in a 250 nm thick SiO2 layer thermally grown on silicon with respective implantation energies of 180 and 115 keV. Subsequent thermal treatments at 800 degrees C lead to the formation of ZnTe-nc. Their sizes are characterized by transmission electron microscopy. The ZnTe-nc obtained with the 1 x 10(16) cm(-2) dose are self-organized into two layers parallel to the surface. Their mean radius ranges between 4-17 nm and 7-17 nm. The ZnTe-nc obtained with the 5 x 10(15) cm(-2) dose are self-organized into one layer with a mean radius between 4-17 nm. A critical points (CPs) dispersion model is used to extract the optical responses of the ZnTe-nc. The optical properties such as the dielectric function and the second derivative of the dielectric function are presented and analyzed. The dielectric function spectra reveal distinct structures attributed to band gap and optical transitions at higher energy. The correlation between the optical responses and the size of the nanocrystals is also given.

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Section: Samplesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dielectric function of ZnTe nanocrystals by spectroscopic ellipsometry

Ahmed

Naciri

Grob³

et al. 2009

Nanotechnology

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show abstract

“…Their respective energies for Zn + and Te + (115 and 180 keV) have been chosen to produce 5–10 at.% maximum concentration for each species. The previous studies by X‐ray diffraction and high resolution transmission electron microscopy (TEM) show the formation of single‐crystalline ZnTe precipitates (mainly cubic phase) 2, 3. Figure 1 shows the TEM image of the ZnTe‐nc embedded in the SiO 2 matrix.…”

Section: Experimental and Modeling Detailsmentioning

confidence: 91%

“…Recently, researches are focused on the elaboration and structural analysis of ZnTe nanocrystals (ZnTe‐nc). Chemam et al 2, 3 have given a first approach to determine the optimum ion implantation conditions (doses, temperature during implantation, and annealing temperature) to control size and/or location of ZnTe‐nc formed by the successive implantation of Zn and Te in a thermally grown SiO 2 on silicon. The ion implantation with subsequent annealing is an appropriate method to synthesize ZnTe‐nc into SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

Optical properties of embedded ZnTe nanocrystals in SiO₂ thin layer

Ahmed

Naciri

Grob³

2010

Physica Status Solidi (a)

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We have studied the optical properties of ZnTe nanocrystals (ZnTe-nc) embedded in a SiO 2 matrix by spectroscopic ellipsometry. The ZnTe-nc are embedded in a SiO 2 matrix by ion implantation technique. The dose of 2.9 Â 10 16 cm À2 of tellurium and zinc ions are implanted in a 250 nm thick SiO 2 layer thermally grown on Si with respective implantation energies of 180 and 115 keV. Subsequent thermal treatments at 700 8C lead to the formation of ZnTe-nc. Their size is characterized by transmission electron microscopy. Variable angle ellipsometric measurements are performed in air at room temperature at angles of incidence of 55, 60, and 658. By taking into account defects caused by ion implantation in silica matrix, the critical points (CPs) dispersion model is used in order to extract the optical responses of the ZnTe-nc. The determined dielectric function spectra reveals distinct structures attributed to direct band gap and optical transition at higher energy. The observed structures are analyzed by fitting second derivative spectrum of the imaginary part of dielectric function with analytic CP line shapes. Results show good agreement with CPs data.

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ZnTe precipitates formed in SiO2 by sequential implantation of Zn+ and Te+ ions

Cited by 2 publications

References 23 publications

Dielectric function of ZnTe nanocrystals by spectroscopic ellipsometry

Dielectric function of ZnTe nanocrystals by spectroscopic ellipsometry

Optical properties of embedded ZnTe nanocrystals in SiO₂ thin layer

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ZnTe precipitates formed in SiO2 by sequential implantation of Zn+ and Te+ ions

Cited by 2 publications

References 23 publications

Dielectric function of ZnTe nanocrystals by spectroscopic ellipsometry

Dielectric function of ZnTe nanocrystals by spectroscopic ellipsometry

Optical properties of embedded ZnTe nanocrystals in SiO2 thin layer

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Optical properties of embedded ZnTe nanocrystals in SiO₂ thin layer