ZnxCd1−xS as a heterojunction partner for CuIn1−xGaxS2 thin film solar cells

Kumar, Bhaskar; Vasekar, Parag; Pethe, Shirish A.; Dhere, Neelkanth G.; Koishiyev, Galymzhan T.

doi:10.1016/j.tsf.2008.10.108

Cited by 22 publications

(13 citation statements)

References 6 publications

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“…21,22 One of the approaches to adjust the CBO is to vary the constituent elements in the semiconductor-alloy buffer layer. For example, (Zn,Cd)S, 23 (Zn,Mg)O, 24 (Zn,Sn)O x , 25 and Zn(O,S) 26 were used in an attempt to replace CdS in CIGS solar cells. In this letter, we present a SnS device with a record power conversion efficiency of 2.04% (total area) using Zn(O,S) as an n-type buffer layer, and evaluate the effect of CBO on device performance.…”

mentioning

confidence: 99%

Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer

Sinsermsuksakul

Hartman

Kim

et al. 2013

Applied Physics Letters

336

230

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SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure of soda-lime glass/Mo/SnS/Zn(O,S)/ZnO/ITO. A record efficiency was achieved for SnS-based thin-film solar cells by varying the oxygen-to-sulfur ratio in Zn(O,S). Increasing the sulfur content in Zn(O,S) raises the conduction band offset between Zn(O,S) and SnS to an optimum slightly positive value. A record SnS/Zn(O,S) solar cell with a S/Zn ratio of 0.37 exhibits short circuit current density (Jsc), open circuit voltage (Voc), and fill factor (FF) of 19.4 mA/cm2, 0.244 V, and 42.97%, respectively, as well as an NREL-certified total-area power-conversion efficiency of 2.04% and an uncertified active-area efficiency of 2.46%.

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mentioning

confidence: 99%

Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer

Sinsermsuksakul

Hartman

Kim

et al. 2013

Applied Physics Letters

336

230

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“…The properties of CdS thin films can be tuned to suit various applications by introducing different amounts of other elements such as zinc. This technique has been used to obtain graded bandgap junctions and lattice matched heterostructures [8][9][10][11][12][13][14][15][16][17]. Theoretically, the bandgap of CdS films can be altered from 2.4 eV to 3.5 eV by introducing zinc in various ratios [10].…”

Section: Introductionmentioning

confidence: 99%

The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

Ashitha¹,

Priya²,

Ali³

et al. 2020

Mater. Res. Express

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The SILAR deposited CdS films were incorporated with various concentrations of zinc using zinc acetate and zinc chloride precursors. The presence of zinc was found to alter the crystal structure and energy bandgap of the films. The bandgap increased by nearly 44% with the increase of zinc concentration in the films. The photoluminescence spectra of the films revealed the presence of several localized defects levels within the forbidden bandgap. The peak spectral response wavelength was found to vary from 500 nm to 400 nm with the increase of zinc. The photocurrent was found to increase with the Cd:Zn ratio. The films with relatively high concentrations of zinc were found to be better suited for the photodetector applications due to their higher photocurrent to dark current ratio.

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“…Also, zincbased hetero-junction partners are preferred over toxic cadmium based compounds such as Cadmium sulfide [70]. Zinc phosphide (Zn 3 P 2 ) is an important optoelectronic material, which also has applications in lithium ion batteries [71].…”

Section: Introductionmentioning

confidence: 99%