Zone model for zinc oxide deposited by combustion chemical vapor deposition

Polley, T.A.; Carter, W.B.

doi:10.1016/s0040-6090(00)01819-8

Cited by 20 publications

(17 citation statements)

References 5 publications

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“…The film shows a high degree of alignment of the columnar structure, thus confirming the c-axis orientation growth as indicated by XRD pattern of the films. Polley and Carter [8] reported on a zone model for ZnO deposited by combustion chemical vapor deposition. In their case, the ZnO films deposited at low temperatures (177 C and 289 C) were amorphous with deep voids between nodular growths.…”

Section: Article In Pressmentioning

confidence: 99%

Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique

Lee

Lau

Wang

et al. 2004

Journal of Crystal Growth

156

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Section: Article In Pressmentioning

confidence: 99%

Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique

Lee

Lau

Wang

et al. 2004

Journal of Crystal Growth

156

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“…The substrate is then passed repeatedly under the flame to build up a coating. [21][22][23] One advantage of this technique is that deposition can be performed at low substrate temperatures, since the energy for decomposition of the precursor is provided by the flame. In addition, because the flame temperature is very high, thermally unstable precursors are not necessarily required.…”

Section: Introductionmentioning

confidence: 99%

Growth of Thin Films of Molybdenum and Tungsten Oxides by Combustion CVD Using Aqueous Precursor Solutions

Davis

Benito

Sheel

et al. 2004

Chemical Vapor Deposition

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Using combustion chemical vapour deposition, layers of molybdenum and tungsten oxides have been deposited on glass and silicon at low temperatures. Inexpensive ammonium salts of molybdate and metatungstate ions were used as precursors and were delivered to the coating flame as an aqueous solution using a nebuliser. The resulting films were analysed by scanning electron microscopy (SEM), energy dispersive analysis of X-rays (EDAX), Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD).These indicate that the films are continuous, moderately smooth and consist of amorphous, disordered molybdenum and tungsten trioxides.

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“…Numerous techniques has been employed in the synthesis of ZnO for the above mentioned applications which includes RF sputtering [24], molecular beam epitaxy [21], [22], thermal chemical vapor deposition (CVD) [25], [26], and spray pyrolysis [27]. Although these techniques are sufficient in producing ZnO thin films for their respective applications but still have many limitations, especially in the growth rate, crystallinity of the as-deposited film, and other undisclosed limitations.…”

Section: B Zno: Properties and Deposition Rates By Different Methodsmentioning

confidence: 99%

Dense Plasma Focus Device Based High Growth Rate Room Temperature Synthesis of Nanostructured Zinc Oxide Thin Films

Tan

Mah

Rawat

2015

IEEE Trans. Plasma Sci.

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High-energy-density plasmas in plasma focus device are now routinely being used as nonconventional plasma nanotechnology tool with novel processing and deposition parameters which are not available in conventional lowtemperature plasma facilities. This paper reports the synthesis of multilayered polycrystalline intrinsic defects-free nanostructured zinc oxide (ZnO) thin film onto room-temperature silicon substrates at high growth rates using pulsed high-energy-density dense plasma focus device. The device was operated in pure oxygen environment and the ablation target used was a pure zinc rod fitted onto the anode top. Thin films of ZnO were deposited at room temperature using different numbers of dense plasma focus shots and at different distances from the anode top. The as-deposited ZnO showed the formation of polycrystalline hexagonal phase ZnO thin films with strong c-axis orientation. The scanning electron microscopy results showed either uniformly laid nanoparticles or cauliflower aggregates of nanoparticles on the surface of the thin-film samples with average nanoparticle size varying between 23.3 ± 6.1 and 69.7 ± 16.5 nm. The average thicknesses of the multilayered thin films were measured to be in a range of 1.06 ± 0.14 to about 2.82 ± 0.32 µm. The complete disappearance of deep level emission band in photoluminescence spectrum of ZnO thin-film sample deposited using 30 focus shots at deposition distance of 15 cm showed successful synthesis of high crystalline quality intrinsic defects-free as-deposited ZnO thin film. One of the key features of the ZnO thin-film synthesis using nonconventional plasma focus device is the very high average growth rate of about 0.1 µm/shot. At one plasma focus shot per minute operation, the average growth rate comes out to be 0.1 µm/min, which is either higher or comparable with commonly used ZnO deposition methods; but at 10 Hz operation extreme growth rates of about 60 µm/min could be achieved.Index Terms-c-axis orientation, dense plasma focus (DPF), high growth rate, multilayered, ZnO thin films.

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Zone model for zinc oxide deposited by combustion chemical vapor deposition

Cited by 20 publications

References 5 publications

Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique

Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique

Growth of Thin Films of Molybdenum and Tungsten Oxides by Combustion CVD Using Aqueous Precursor Solutions

Dense Plasma Focus Device Based High Growth Rate Room Temperature Synthesis of Nanostructured Zinc Oxide Thin Films

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