ZrO<sub>2</sub>-HfO<sub>2</sub> Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

Liang, Yan-Kui; Li, Weili; Wang, Yong-Jyun; Peng, Li-Chi; Lu, Chin Lung; Huang, Huai-Ying; Yeong, Sai Hooi; Lin, Yu-Ming; Chu, Ying-Hao; Chang, Edward Yi; Lin, Chih-Min

doi:10.1109/led.2022.3193383

Cited by 24 publications

(7 citation statements)

References 29 publications

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“…Figure d shows the measured high-resolution grazing incidence XRD (GIXRD) patterns with an incident angle of 1° for different SL and HZO films. It was clearly to see that all the SL FE films and HZO film exhibited the strongest peak at 30.5°, which is corresponding to the orthorhombic (111) phase and considered to contribute to the ferroelectricity of the films. , …”

Section: Experimental Sectionmentioning

confidence: 95%

“…It was clearly to see that all the SL FE films and HZO film exhibited the strongest peak at 30.5°, which is corresponding to the orthorhombic (111) phase and considered to contribute to the ferroelectricity of the films. 13,14…”

Section: Methodsmentioning

confidence: 99%

“…13 Additionally, Liang et al have demonstrated that the SL metal-FE-metal (MFM) capacitors, with 600 °C PMA, exhibited significantly improved endurance performance with almost "wake-up"-free and fatigue-free robust polarization behavior up to 10 11 cycles of field cycling. 14 These findings suggest that the SL structure offers superior ferroelectric characteristics and reliability compared to HZO FE films. However, there are relatively few experimental studies on the potential mechanisms and reasons for the improved FE characteristics and reliability of HfO 2 −ZrO 2 FE films with the SL structures; also, the differences between different SL structures have not been experimentally investigated.…”

Section: Introductionmentioning

confidence: 92%

“…Recently, researchers have achieved significant progress in the development of ferroelectric (FE) films by realizing a HfO 2 –ZrO 2 superlattice (SL) FE film. − This development has resulted in a remarkable improvement in the endurance performance of the film, exceeding 10 12 cycles, and an improved fatigue recovery capability . Additionally, Liang et al have demonstrated that the SL metal-FE-metal (MFM) capacitors, with 600 °C PMA, exhibited significantly improved endurance performance with almost “wake-up”-free and fatigue-free robust polarization behavior up to 10 11 cycles of field cycling . These findings suggest that the SL structure offers superior ferroelectric characteristics and reliability compared to HZO FE films.…”

Section: Introductionmentioning

confidence: 99%

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HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Kang,

Peng,

Xiao

et al. 2024

ACS Appl. Mater. Interfaces

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HfO 2 −ZrO 2 ferroelectric films have recently gained considerable attention from integrated circuit researchers due to their excellent ferroelectric properties over a wide doping range and low deposition temperature. In this work, different HfO 2 − ZrO 2 superlattice (SL) FE films with varying periodicity of HfO 2 (5 cycles)−ZrO 2 (5 cycles) (SL 5 ), HfO 2 (10 cycles)−ZrO 2 (10 cycles) (SL 10 ), and HfO 2 (15 cycles)−ZrO 2 (15 cycles) (SL 15 ) were studied systematically. The HfZrO x (HZO) alloy was used as a comparison device. The SL 5 film demonstrated improved ferroelectric properties compared to the HZO film, with the 2 times remnant polarization (2P r ) values increasing from 41.4 to 48.6 μC/cm 2 at an applied voltage of 3 V/10 kHz. Furthermore, the first-order reversal curve diagrams of different SL and HZO capacitors at different states (initial, wake-up, fatigue, and recovery) were measured. The SL capacitors were found to effectively suppress the diffusion of defects during P−V cycling, resulting in improved fatigue stability characteristics and fatigue recovery capability compared to the HZO capacitor. Moreover, an improved switching speed of the SL films compared to the HZO capacitor was concluded based on the inhomogeneous field mechanism (IFM) model. These results indicate that the SL structure has a high potential in future high-speed ferroelectric memory applications with excellent stability and recovery capability.

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Section: Experimental Sectionmentioning

confidence: 95%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

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HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Kang,

Peng,

Xiao

et al. 2024

ACS Appl. Mater. Interfaces

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“…The accumulation of charged defects and charge trapping/detrapping processes at the interface between the electrode and HZO are the primary root causes of polarization fatigue and Pr variation after field cycling [50]. Reducing the overlap between each intermediate polarization state is crucial for multi-level cell (MLC) operation [51][52][53].…”

Section: Reliable Triple-level Cell Operationmentioning

confidence: 99%

Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO₂/ZrO₂ ferroelectric capacitors towards long endurance and high temperature retention

Wang,

Liu,

Chen

et al. 2024

Nanotechnology

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A novel defect control approach based on laminated HfO2/ZrO2 with multifunctional TiN/Mo/TiOxNy electrode is proposed to significantly improve the endurance and data retention in HZO-based ferroelectric capacitor. The O-rich interface reduces leakage current and prolong the endurance up to 1E11 cycles while retaining a 2Pr value of 34 (μC/cm^2) at 3.4MV/cm. Using first-principles calculations and experiments, we demonstrate that the enhancement of endurance is ascribed to the higher migration barrier of oxygen vacancies within the laminated HZO film and higher work function of MoOx/TiOxNy between top electrode and the insulating oxide. This 2.5-nm-thick TiOxNy barrier further increase the grain size of HZO, lowering the activation field and thus improving polarization reversal speed. This interfacial layer further decreases the overall capacitance, increases the depolarization field, thereby enhancing the data retention. By fitting the data using the Arrhenius equation, we demonstrate a 10-year data retention is achieved at 109.6 °C, surpassing traditional SS-HZO of 78.2 °C with a 450°C RTA (required by backend-of-the-line). This work elucidates that interfacial engineering serves as a crucial technology capable of resolving the endurance, storage capability, and high-temperature data retention issues for ferroelectric memory.

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Layer‐Engineered Functional Multilayer Thin‐Film Structures and Interfaces through Atomic and Molecular Layer Deposition

Heikkinen,

Ghiyasi,

Karppinen

2024

Adv Materials Inter

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Atomic layer deposition (ALD) technology is one of the cornerstones of the modern microelectronics industry, where it is exploited in the fabrication of high‐quality inorganic thin films with excellent precision for film thickness and conformality. Molecular layer deposition (MLD) is a counterpart of ALD for purely organic thin films. Both ALD and MLD rely on self‐limiting gas‐surface reactions of vaporized and sequentially pulsed precursors and are thus modular, meaning that different precursor pulsing cycles can be combined in an arbitrary manner for the growth of elaborated superstructures. This allows the fusion of different building blocks — either inorganic or organic — even with contradicting properties into a single thin‐film material, to realize unforeseen material functions which can ultimately lead to novel application areas. Most importantly, many of these precisely layer‐engineered materials with attractive interfacial properties are inaccessible to other synthesis/fabrication routes. In this review, the intention is to present the current state of research in the field by i) summarizing the ALD and MLD processes so far developed for the multilayer thin films, ii) highlighting the most intriguing material properties and potential application areas of these unique layer‐engineered materials, and iii) outlining the future perspectives for this approach.

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ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

Cited by 24 publications

References 29 publications

HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO₂/ZrO₂ ferroelectric capacitors towards long endurance and high temperature retention

Layer‐Engineered Functional Multilayer Thin‐Film Structures and Interfaces through Atomic and Molecular Layer Deposition

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ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

Cited by 24 publications

References 29 publications

HfO2–ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

HfO2–ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO2/ZrO2 ferroelectric capacitors towards long endurance and high temperature retention

Layer‐Engineered Functional Multilayer Thin‐Film Structures and Interfaces through Atomic and Molecular Layer Deposition

Contact Info

Product

Resources

About

ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO₂/ZrO₂ ferroelectric capacitors towards long endurance and high temperature retention