Zur Ätzstruktur von Silizium‐Einkristallen, besonders in versetzungsfreien Bereichen

Abstract

In silicon crystals a real etching structure can be visualized by means of a suitablc method of etching also in the domains free from dislocations. The shapes of etch pits are chiefly dcpendent on the orientation of the grinding faces. It may be that the etching structure comes from growth domains, bordered by faces { 111 } , at which impurities arc segregated or adsorbed.