Zur Kenntnis des quaternären Systems ZnInSSe Der Schnitt ZnIn2S4Znln2Se4In2S3In2Se3

Haeuseler, H.; Himmrich, M.

doi:10.1002/zaac.19865350403

Cited by 15 publications

(6 citation statements)

References 14 publications

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“…Both deposition and post-annealing parameters were varied in order to find optimal conditions for the formation of single phase In 2 Se 3 . In agreement with the previous report [1,2] it was observed that Zn doping during deposition promoted formation of κ-In 2 Se 3 , while air exposure or passivation layer deposition suppressed it. Zn doping allows single-phase κ-In 2 Se 3 to be deposited in polycrystalline form onto substrates heated in the 125 to 250 o C range, while wellannealed undoped films always contained some γ−phase.…”

supporting

confidence: 92%

Crystal structure of κ-In2Se3

Jasiński

Swider

Washburn

et al. 2002

Applied Physics Letters

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Structural properties of single-phase films of κ-In 2 Se 3 and γ-In 2 Se 3 were investigated.Both films were polycrystalline but their microstructure differed considerably. The alattice parameter of κ-In 2 Se 3 has been measured. Comparison between these two materials indicates that κ-In 2 Se 3 has a significantly larger unit cell (∆c = 2.5 ± 0.2 % and ∆a = 13.5 ± 0.5 %) and a structure more similar to the α-phase of In 2 Se 3 . a)

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supporting

confidence: 92%

Crystal structure of κ-In2Se3

Jasiński

Swider

Washburn

et al. 2002

Applied Physics Letters

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“…Some peaks with similar d-spacings to -In 2 Se 3 were reported for In 2 Zn 0.4 Se 3 . 21 The XRD spectrum in Fig. 5 shows that all (00l) peaks appear, in contrast to the ␥-In 2 Se 3 spectrum, which typically shows only the ͑006͒ and ͑00 12͒ peaks.…”

Section: Zn-induced Stabilization Of the -In 2 Se 3 Phase In Hot-depomentioning

confidence: 92%

“…20 that the κ-In 2 Se 3 is a newly identified phase, as previously claimed. [6] If the κ structure is characteristic of an easily produced metastable phase, then why wasn't it observed in one of the many earlier studies on the In-Se system, beyond that of Haeuseler et al [21] and deGroot and coworkers? [6] One reason is that κ forms only at low temperatures, as shown in Fig.…”

Section: B Resistivity and Hall Measurementsmentioning

confidence: 99%

Structural and electronic properties of amorphous and polycrystalline In2Se3 films

Chaiken

Nauka

Gibson

et al. 2003

Journal of Applied Physics

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Articles you may be interested inPhotoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Structural and electronic properties of amorphous and single-phase polycrystalline films of ␥and -In 2 Se 3 have been measured. The effect of deposition conditions on the film phase was studied extensively. The stable ␥ phase nucleates homogeneously in the film bulk and has a high resistivity, while the metastable phase nucleates at the film surface and has a moderate resistivity. The microstructures of polycrystalline hot-deposited and postannealed, cold-deposited ␥ films are quite different but their electronic properties are similar. The increase in the resistivity of amorphous In 2 Se 3 films upon annealing is interpreted in terms of the replacement of In-In bonds with In-Se bonds during crystallization. Great care must be taken in the preparation of In 2 Se 3 films for electrical measurements as the presence of excess chalcogen or surface oxidation may greatly affect the film properties.

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“…Except for the small peak due to the ␥-006 reflection, the peaks, displayed in Table I, do not correspond to any known phase of the In-Se phase diagram, although peaks at some of those positions have been reported, unindexed, in an InSe hydrate 16 and in In 2 Zn 0.4 Se 3 . 17 The x-ray pattern corresponds to a single inter planar spacing and can be indexed with consecutive 00l peaks.…”

Section: A Structural Characterizationmentioning

confidence: 99%

Growth and characterization of a novel In2Se3 structure

Groot

Moodera

2001

Journal of Applied Physics

109

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Thin films of In 2 Se 3 deposited by thermal co-evaporation crystallize upon vacuum annealing almost single phase into an, up to now, unknown structure. Only when the films are capped with a thin oxide layer before annealing, the reportedly stable ␥-In 2 Se 3 structure, single phase and aligned along the c axis forms. Rutherford backscattering confirms an In to Se ratio of 2 to 3 for both structures. Nevertheless, the new structure has distinct x-ray diffraction peaks and Raman spectra. The new structure has a much lower resistivity than the ␥-In 2 Se 3 structure, consistent with its smaller electrical and optical energy gap. Both structures show large photoconductivity.

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Zur Kenntnis des quaternären Systems ZnInSSe Der Schnitt ZnIn₂S₄Znln₂Se₄In₂S₃In₂Se₃

Cited by 15 publications

References 14 publications

Crystal structure of κ-In2Se3

Crystal structure of κ-In2Se3

Structural and electronic properties of amorphous and polycrystalline In2Se3 films

Growth and characterization of a novel In2Se3 structure

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