α-Ga₂O₃ Nanorod Array–Cu₂O Microsphere p–n Junctions for Self-Powered Spectrum-Distinguishable Photodetectors

Abstract

Most of the photodetectors can measure all of the light illumination with a wavelength below the absorption edge of the detector materials, while they cannot distinguish the different waveband. Herein, a self-powered spectrum-distinguishable photoelectrochemical (PEC) type photodetector based on an α-Ga2O3 nanorod array (NA)/Cu2O microsphere (MS) p–n junction was reported. Under the combined action of the built-in electric field of the p–n junction and the semiconductor/electrolyte junction, the photodetector exhibits an opposite direction of the photocurrent to the illumination of 254 and 365 nm UV light under the applied bias of 0 V, which can be used to distinguish the different wavelengths of light. The photodetector shows a responsivity of 0.42 mA/W under 254 nm UV light and 0.57 mA/W upon 365 nm, respectively. Our results provide an idea for distinguishing the different illumination wavebands through a photodetector constructed by the heterojunction with two different band gap materials.

Highly Uniform, Self‐Assembled AlGaN Nanowires for Self‐Powered Solar‐Blind Photodetector with Fast‐Response Speed and High Responsivity

“…For a better comparison of the solar‐blind photodetection ability, Figure 4d plots the device performance of the newly designed PEC PDs in this work and recently reported self‐powered solar‐blind PEC PDs with nanostructure photoelectrodes based on wide bandgap oxides and sulfides. [ 12,34–36 ] Obviously, our proposed AlGaN:Ru NW PEC PD shows ever‐reported fastest photoresponse speed and highest responsivity, revealing the great potential of such device architectures in the field of the high‐efficiency solar‐blind PEC photodetection. Moreover, the device performance of AlGaN:Ru NW PEC PDs depends not only on the excitation and transport of carriers within the semiconductor itself, but also on the diffusion of ions in the aqueous environment, which provide us a new method to modulate the photodetection performance to meet desired requirements.…”

Phase junction enhanced photocatalytic activity of Ga2O3 nanorod arrays on flexible glass fiber fabric

“…06-0503). 50 The phase transition of a-Ga 2 O 3 at 700 C for various times was also analyzed by XRD, and the corresponding results are shown in Fig. 2(b).…”

Preparation of solution processed photodetectors comprised of two-dimensional tin(ii) sulfide nanosheet thin films assembled via the Langmuir–Blodgett method

“…The responsivity of the device was determined to be 1.79 Â 10 À8 A W À1 , with a photoresponse rise and fall time of 0.77 s and 0.85 s respectively. The responsivity is lower than for photodetectors prepared by Guo et al 66 Improvements to the device to improve the responsivity could include methods to improve the lateral size of nanosheets such as intercalation. 67 Other routes to improve the device may include doping 68,69 or a change in architecture to a phototransistor type device.…”