β-FeSi2 based metal-insulator-semiconductor devices formed by sputtering for optoelectronic applications

Ootsuka, Teruhisa; Liu, Zhengxin; Osamura, Masato; Fukuzawa, Yasuhiro; Otogawa, Naotaka; Nakayama, Yasuhiko; Tanoue, H.; Makita, Yunosuke

doi:10.1016/j.mseb.2005.08.043

Cited by 13 publications

(10 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is possible that the extra spots on Si(100)/gold result from the presence of crystalline gold silicides (summarized in Table 1, Supporting Information). In Figure 5a for gold on Si(111), there are seven additional spots (in green), of which four can be indexed against the Au 2 Si, Au 5 Si, Au 7 Si intermetallics. In Figure 5b for gold on Si(100), 11 additional spots are observed of which 9 can be indexed for intermetallics, and in Figure 5c, for a different region of gold on Si(100), 12 extra spots are observed of which 7 can be indexed for intermetallics.…”

Section: Resultsmentioning

confidence: 99%

“…In Figure 5b for gold on Si(100), 11 additional spots are observed of which 9 can be indexed for intermetallics, and in Figure 5c, for a different region of gold on Si(100), 12 extra spots are observed of which 7 can be indexed for intermetallics. The spots in the Si(100) case correspond to the following intermetallics: Au 7 Si, Au 4 Si, Au 5 Si, Au 5 Si 2 ,Au 3 Si 2 ,Au 3 Si, and Au 2 Si. Similarly, six extra spots are observed in the diffraction pattern for a gold nanoparticle on a silicon nanowire (Figure 5d), three of which can be indexed to the Au 2 Si, Au 5 Si, and Au 7 Si intermetallics.…”

Section: Resultsmentioning

confidence: 99%

“…The spots in the Si(100) case correspond to the following intermetallics: Au 7 Si, Au 4 Si, Au 5 Si, Au 5 Si 2 ,Au 3 Si 2 ,Au 3 Si, and Au 2 Si. Similarly, six extra spots are observed in the diffraction pattern for a gold nanoparticle on a silicon nanowire (Figure 5d), three of which can be indexed to the Au 2 Si, Au 5 Si, and Au 7 Si intermetallics. Because the nanoprobe diffraction studies are certainly not comprehensive with respect to determination and characterization of gold silicides due to the very high complexity of the system, the characterization of these gold silicides cannot be considered complete.…”

Section: Resultsmentioning

confidence: 99%

“…nterfacing metals with semiconductor surfaces at the nanometer scale has received much attention 1 as a result of the critical importance of these interfaces for applications such as integrated circuits, 2Ϫ4 optoelectronics, 5,6 and others. 7,8 An efficient and versatile approach for the synthesis of metallic nanostructures on semiconductors is galvanic displacement, a spontaneous electrochemical reaction that is a member of the electroless deposition family.…”

mentioning

confidence: 99%

See 3 more Smart Citations

Heteroepitaxial Growth of Gold Nanostructures on Silicon by Galvanic Displacement

et al. 2009

View full text Add to dashboard Cite

This work focuses on the synthesis and interfacial characterization of gold nanostructures on silicon surfaces, including Si(111), Si(100), and Si nanowires. The synthetic approach uses galvanic displacement, a type of electroless deposition that takes place in an efficient manner under aqueous, room-temperature conditions. The case of gold-on-silicon has been widely studied and used for several applications and yet, a number of important, fundamental questions remain as to the nature of the interface. Some studies are suggestive of heteroepitaxial growth of gold on the silicon surface, whereas others point to the existence of a silicon؊gold intermetallic sandwiched between the metallic gold and the underlying silicon substrate. Through detailed high resolution transmission electron microscopy (TEM), combined with selected area electron diffraction (SAED) and nanobeam diffraction (NBD), heteroepitaxial gold that is grown by galvanic displacement is confirmed on both Si(100) and Si(111), as well as silicon nanowires. The coincident site lattice (CSL) of gold-on-silicon results in a very small 0.2% lattice mismatch due to the coincidence of four gold lattices to three of silicon. The presence of gold؊silicon intermetallics is suggested by the appearance of additional spots in the electron diffraction data. The gold؊silicon interfaces appear heterogeneous with distinct areas of heteroepitaxial gold on silicon, and others, less well-defined, where intermetallics may reside. The high resolution cross-sectional TEM images reveal a roughened silicon interface under these aqueous galvanic displacement conditions, which most likely promotes nucleation of metallic gold islands that merge over time: a Volmer؊Weber growth mechanism in the initial stages.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Heteroepitaxial Growth of Gold Nanostructures on Silicon by Galvanic Displacement

et al. 2009

View full text Add to dashboard Cite

show abstract

“…These recombination processes annihilate the photo-generated EHPs and therefore are important to the operation of solar cells. [39,84], and (3) β-FeSi 2 -based metal-insulator-semiconductor (MIS) structure [85]. The main problems and challenges concern the control of interface quality and defects, which are the important factors affecting the cell performance.…”

Section: Efficiency Lossesmentioning

confidence: 99%

Theoretical and experimental study of semiconducting iron disilicide and its applications to thin film solar cells

Tan¹

View full text Add to dashboard Cite

Transition metal silicides have been studied extensively for many years due to their potential technological importance and applications. Recently, the semiconducting phase of iron disilicide (β-FeSi 2) has received considerable attention due to its potential applications in optoelectronic and microelectronic areas. This is attributed to its direct K. H. Tan iii which confirmed the theoretical predictions. A carrier concentration in a tunable range of 10 17 cm-3 and a mobility in the order of 100 cm 2 /Vs were consistently obtained. Using this knowledge, p-type B-doped β-FeSi 2 /n-Si heterojunction thin film solar cells were fabricated. The effects of various physical parameters on the output characteristics of the cells were investigated and found to have a direct influence on the cell performance.

show abstract

The role of silane gas flow rate on PECVD-assisted fabrication of silicon nanowires

2016

View full text Add to dashboard Cite

β-FeSi2 based metal-insulator-semiconductor devices formed by sputtering for optoelectronic applications

Cited by 13 publications

References 15 publications

Heteroepitaxial Growth of Gold Nanostructures on Silicon by Galvanic Displacement

Heteroepitaxial Growth of Gold Nanostructures on Silicon by Galvanic Displacement

Theoretical and experimental study of semiconducting iron disilicide and its applications to thin film solar cells

The role of silane gas flow rate on PECVD-assisted fabrication of silicon nanowires

Contact Info

Product

Resources

About